Controllable Doping Characteristics for WS x Se y Monolayers Based on the Tunable S/Se Ratio.
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| Title: | Controllable Doping Characteristics for WS x Se y Monolayers Based on the Tunable S/Se Ratio. |
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| Authors: | Ji, Chen1 (AUTHOR), Chang, Yung-Huang2 (AUTHOR) changyhu@yuntech.edu.tw, Huang, Chien-Sheng3 (AUTHOR), Huang, Bohr-Ran1 (AUTHOR), Chen, Yuan-Tsung4 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Jul2023, Vol. 13 Issue 14, p2107. 13p. |
| Subjects: | Monomolecular films, Selenoproteins, Chemical vapor deposition, Band gaps, Energy bands, Raman spectroscopy |
| Abstract: | Transition metal dichalcogenides (TMDs) have attracted much attention because of their unique characteristics and potential applications in electronic devices. Recent reports have successfully demonstrated the growth of 2-dimensional MoSxSey, MoxWyS2, MoxWySe2, and WSxSey monolayers that exhibit tunable band gap energies. However, few works have examined the doping behavior of those 2D monolayers. This study synthesizes WSxSey monolayers using the CVD process, in which different heating temperatures are applied to sulfur powders to control the ratio of S to Se in WSxSey. Increasing the Se component in WSxSey monolayers produced an apparent electronic state transformation from p-type to n-type, recorded through energy band diagrams. Simultaneously, p-type characteristics gradually became clear as the S component was enhanced in WSxSey monolayers. In addition, Raman spectra showed a red shift of the WS2-related peaks, indicating n-doping behavior in the WSxSey monolayers. In contrast, with the increase of the sulfur component, the blue shift of the WSe2-related peaks in the Raman spectra involved the p-doping behavior of WSxSey monolayers. In addition, the optical band gap of the as-grown WSxSey monolayers from 1.97 eV to 1.61 eV is precisely tunable via the different chalcogenide heating temperatures. The results regarding the doping characteristics of WSxSey monolayers provide more options in electronic and optical design. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 169332819 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Controllable Doping Characteristics for WS x Se y Monolayers Based on the Tunable S/Se Ratio. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Ji%2C+Chen%22">Ji, Chen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chang%2C+Yung-Huang%22">Chang, Yung-Huang</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> changyhu@yuntech.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Huang%2C+Chien-Sheng%22">Huang, Chien-Sheng</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Huang%2C+Bohr-Ran%22">Huang, Bohr-Ran</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Yuan-Tsung%22">Chen, Yuan-Tsung</searchLink><relatesTo>4</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Jul2023, Vol. 13 Issue 14, p2107. 13p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Monomolecular+films%22">Monomolecular films</searchLink><br /><searchLink fieldCode="DE" term="%22Selenoproteins%22">Selenoproteins</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+bands%22">Energy bands</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Transition metal dichalcogenides (TMDs) have attracted much attention because of their unique characteristics and potential applications in electronic devices. Recent reports have successfully demonstrated the growth of 2-dimensional MoSxSey, MoxWyS2, MoxWySe2, and WSxSey monolayers that exhibit tunable band gap energies. However, few works have examined the doping behavior of those 2D monolayers. This study synthesizes WSxSey monolayers using the CVD process, in which different heating temperatures are applied to sulfur powders to control the ratio of S to Se in WSxSey. Increasing the Se component in WSxSey monolayers produced an apparent electronic state transformation from p-type to n-type, recorded through energy band diagrams. Simultaneously, p-type characteristics gradually became clear as the S component was enhanced in WSxSey monolayers. In addition, Raman spectra showed a red shift of the WS2-related peaks, indicating n-doping behavior in the WSxSey monolayers. In contrast, with the increase of the sulfur component, the blue shift of the WSe2-related peaks in the Raman spectra involved the p-doping behavior of WSxSey monolayers. In addition, the optical band gap of the as-grown WSxSey monolayers from 1.97 eV to 1.61 eV is precisely tunable via the different chalcogenide heating temperatures. The results regarding the doping characteristics of WSxSey monolayers provide more options in electronic and optical design. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano13142107 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 13 StartPage: 2107 Subjects: – SubjectFull: Monomolecular films Type: general – SubjectFull: Selenoproteins Type: general – SubjectFull: Chemical vapor deposition Type: general – SubjectFull: Band gaps Type: general – SubjectFull: Energy bands Type: general – SubjectFull: Raman spectroscopy Type: general Titles: – TitleFull: Controllable Doping Characteristics for WS x Se y Monolayers Based on the Tunable S/Se Ratio. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ji, Chen – PersonEntity: Name: NameFull: Chang, Yung-Huang – PersonEntity: Name: NameFull: Huang, Chien-Sheng – PersonEntity: Name: NameFull: Huang, Bohr-Ran – PersonEntity: Name: NameFull: Chen, Yuan-Tsung IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 07 Text: Jul2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 13 – Type: issue Value: 14 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
| ResultId | 1 |
