View in EDS

Performance improvement of TiO2 nanorods ultraviolet photodetector by AlN thin film passivation.

Saved in:
Bibliographic Details
Title: Performance improvement of TiO2 nanorods ultraviolet photodetector by AlN thin film passivation.
Authors: Huang, Jung-Jie1 (AUTHOR) jjhuang@mail.dyu.edu.tw, Ho, Ying-Rong2 (AUTHOR)
Source: Materials Science in Semiconductor Processing. Nov2023, Vol. 166, pN.PAG-N.PAG. 1p.
Subjects: Thin films, Passivation, Photodetectors, Quantum confinement effects, Nanorods, Photoelectricity
Abstract: Surface defects on TiO 2 nanorods (NRs) adsorb oxygen molecules and capture free electrons, thereby resulting in carrier recombination and reducing the photoelectric conversion performance of TiO 2 NRs ultraviolet (UV) solid-liquid heterojunction photodetectors. To solve this problem, wide energy bandgap AlN thin film was fabricated on TiO 2 NRs to passivate the surface defects. Because of the chemical passivation effect of the AlN thin film and the quantum confinement effect of its wide bandgap, the number of defects and leakage loss were effectively reduced. According to the analysis results, the defect valence ratio of Ti2+ and Ti3+ in TiO 2 NRs passivated by the AlN thin film decreased by 11.6%, the photoresponsivity of the device increased by 31.6%, the full-width at half-maximum photoresponse decreased by 47.1%, and the response wavelength shifted from 360 to 350 nm. Overall, the wide energy bandgap AlN passivation layer exhibited the advantages of both chemical passivation and quantum confinement, making it highly suitable for improving the performance of UV photodetectors. [ABSTRACT FROM AUTHOR]
Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 169753291
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Performance improvement of TiO2 nanorods ultraviolet photodetector by AlN thin film passivation.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Huang%2C+Jung-Jie%22">Huang, Jung-Jie</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jjhuang@mail.dyu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Ho%2C+Ying-Rong%22">Ho, Ying-Rong</searchLink><relatesTo>2</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>. Nov2023, Vol. 166, pN.PAG-N.PAG. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Passivation%22">Passivation</searchLink><br /><searchLink fieldCode="DE" term="%22Photodetectors%22">Photodetectors</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+confinement+effects%22">Quantum confinement effects</searchLink><br /><searchLink fieldCode="DE" term="%22Nanorods%22">Nanorods</searchLink><br /><searchLink fieldCode="DE" term="%22Photoelectricity%22">Photoelectricity</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Surface defects on TiO 2 nanorods (NRs) adsorb oxygen molecules and capture free electrons, thereby resulting in carrier recombination and reducing the photoelectric conversion performance of TiO 2 NRs ultraviolet (UV) solid-liquid heterojunction photodetectors. To solve this problem, wide energy bandgap AlN thin film was fabricated on TiO 2 NRs to passivate the surface defects. Because of the chemical passivation effect of the AlN thin film and the quantum confinement effect of its wide bandgap, the number of defects and leakage loss were effectively reduced. According to the analysis results, the defect valence ratio of Ti2+ and Ti3+ in TiO 2 NRs passivated by the AlN thin film decreased by 11.6%, the photoresponsivity of the device increased by 31.6%, the full-width at half-maximum photoresponse decreased by 47.1%, and the response wavelength shifted from 360 to 350 nm. Overall, the wide energy bandgap AlN passivation layer exhibited the advantages of both chemical passivation and quantum confinement, making it highly suitable for improving the performance of UV photodetectors. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=169753291
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.mssp.2023.107756
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Passivation
        Type: general
      – SubjectFull: Photodetectors
        Type: general
      – SubjectFull: Quantum confinement effects
        Type: general
      – SubjectFull: Nanorods
        Type: general
      – SubjectFull: Photoelectricity
        Type: general
    Titles:
      – TitleFull: Performance improvement of TiO2 nanorods ultraviolet photodetector by AlN thin film passivation.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Huang, Jung-Jie
      – PersonEntity:
          Name:
            NameFull: Ho, Ying-Rong
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 11
              Text: Nov2023
              Type: published
              Y: 2023
          Identifiers:
            – Type: issn-print
              Value: 13698001
          Numbering:
            – Type: volume
              Value: 166
          Titles:
            – TitleFull: Materials Science in Semiconductor Processing
              Type: main
ResultId 1