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Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface.

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Title: Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface.
Authors: Su, Zih-Chun1 (AUTHOR) f06941006@ntu.edu.tw, Lin, Ching-Fuh1,2,3 (AUTHOR) lincf@ntu.edu.tw
Source: Nanomaterials (2079-4991). Aug2023, Vol. 13 Issue 15, p2193. 12p.
Subjects: Infrared detectors, Schottky barrier, Insulating materials, Semiconductor materials, Flux pinning, Metal insulator semiconductors, Nanosilicon
Abstract: Silicon-based photodetectors are attractive as low-cost and environmentally friendly optical sensors. Also, their compatibility with complementary metal-oxide-semiconductor (CMOS) technology is advantageous for the development of silicon photonics systems. However, extending optical responsivity of silicon-based photodetectors to the mid-infrared (mid-IR) wavelength range remains challenging. In developing mid-IR infrared Schottky detectors, nanoscale metals are critical. Nonetheless, one key factor is the Fermi-level pinning effect at the metal/silicon interface and the presence of metal-induced gap states (MIGS). Here, we demonstrate the utilization of the passivated surface layer on semiconductor materials as an insulating material in metal-insulator-semiconductor (MIS) contacts to mitigate the Fermi-level pinning effect. The removal of Fermi-level pinning effectively reduces the Schottky barrier height by 12.5% to 16%. The demonstrated devices exhibit a high responsivity of up to 234 μA/W at a wavelength of 2 μm, 48.2 μA/W at 3 μm, and 1.75 μA/W at 6 μm. The corresponding detectivities at 2 and 3 μm are 1.17 × 108 cm Hz1/2 W−1 and 2.41 × 107 cm Hz1/2 W−1, respectively. The expanded sensing wavelength range contributes to the application development of future silicon photonics integration platforms. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface.
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  Data: <searchLink fieldCode="AR" term="%22Su%2C+Zih-Chun%22">Su, Zih-Chun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> f06941006@ntu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Lin%2C+Ching-Fuh%22">Lin, Ching-Fuh</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> lincf@ntu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Aug2023, Vol. 13 Issue 15, p2193. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Infrared+detectors%22">Infrared detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Schottky+barrier%22">Schottky barrier</searchLink><br /><searchLink fieldCode="DE" term="%22Insulating+materials%22">Insulating materials</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+materials%22">Semiconductor materials</searchLink><br /><searchLink fieldCode="DE" term="%22Flux+pinning%22">Flux pinning</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+insulator+semiconductors%22">Metal insulator semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Nanosilicon%22">Nanosilicon</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Silicon-based photodetectors are attractive as low-cost and environmentally friendly optical sensors. Also, their compatibility with complementary metal-oxide-semiconductor (CMOS) technology is advantageous for the development of silicon photonics systems. However, extending optical responsivity of silicon-based photodetectors to the mid-infrared (mid-IR) wavelength range remains challenging. In developing mid-IR infrared Schottky detectors, nanoscale metals are critical. Nonetheless, one key factor is the Fermi-level pinning effect at the metal/silicon interface and the presence of metal-induced gap states (MIGS). Here, we demonstrate the utilization of the passivated surface layer on semiconductor materials as an insulating material in metal-insulator-semiconductor (MIS) contacts to mitigate the Fermi-level pinning effect. The removal of Fermi-level pinning effectively reduces the Schottky barrier height by 12.5% to 16%. The demonstrated devices exhibit a high responsivity of up to 234 μA/W at a wavelength of 2 μm, 48.2 μA/W at 3 μm, and 1.75 μA/W at 6 μm. The corresponding detectivities at 2 and 3 μm are 1.17 × 108 cm Hz1/2 W−1 and 2.41 × 107 cm Hz1/2 W−1, respectively. The expanded sensing wavelength range contributes to the application development of future silicon photonics integration platforms. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.3390/nano13152193
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      – Code: eng
        Text: English
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      – SubjectFull: Infrared detectors
        Type: general
      – SubjectFull: Schottky barrier
        Type: general
      – SubjectFull: Insulating materials
        Type: general
      – SubjectFull: Semiconductor materials
        Type: general
      – SubjectFull: Flux pinning
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      – SubjectFull: Metal insulator semiconductors
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      – SubjectFull: Nanosilicon
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      – TitleFull: Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface.
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            NameFull: Su, Zih-Chun
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            NameFull: Lin, Ching-Fuh
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            – D: 01
              M: 08
              Text: Aug2023
              Type: published
              Y: 2023
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