Comprehensive, physically based modelling of As in Si
Saved in:
| Title: | Comprehensive, physically based modelling of As in Si |
|---|---|
| Authors: | Pinacho, R. rutpin@tel.uva.es, Jaraiz, M.1, Castrillo, P.1, Rubio, J.E.1, Martin-Bragado, I.1, Barbolla, J.1 |
| Source: | Materials Science & Engineering: B. Dec2004, Vol. 114-115, p135-140. 6p. |
| Subjects: | Complementary metal oxide semiconductors, Diffusion, Semiconductor doping, Solution (Chemistry) |
| Abstract: | Abstract: An accurate knowledge of the behavior of Arsenic appearing at high concentrations during thermal processes is essential for today''s CMOS technology so that As is the most widely used n-type Si dopant in ultralarge scale integrated circuits. In spite of the large amount of successful research work devoted to reproducing As kinetics in Si, the level of complexity reached by Si device fabrication technologies claims for a more comprehensive physical modelling that, based on fundamental parameters of some basic As configurations could simultaneously account for aspects such as diffusion, electrical deactivation and amorphization/recrystallization after As implantation and annealing among others. We have used the atomistic kinetic Monte-Carlo simulator DADOS to develop a consistent physical model for As that includes a limited set of AsV clusters of different sizes and energies. Through a detailed modelling of Fermi level effects, we will discuss the main features of As behavior in Si such as: (i) intrinsic and extrinsic As diffusion; (ii) electrical deactivation at high As concentrations; (iii) annealing of As implanted profiles; and (iv) other striking features such as the interstitial supersaturation induced by rapid electrical deactivation of very high As concentrations at low temperatures. Finally, in order to test the model, this has been implemented with DADOS and compared with experiments, showing a good agreement in all the cases. [Copyright &y& Elsevier] |
| Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 17125092 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Comprehensive, physically based modelling of As in Si – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Pinacho%2C+R%2E%22">Pinacho, R.</searchLink><i> rutpin@tel.uva.es</i><br /><searchLink fieldCode="AR" term="%22Jaraiz%2C+M%2E%22">Jaraiz, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Castrillo%2C+P%2E%22">Castrillo, P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Rubio%2C+J%2EE%2E%22">Rubio, J.E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Martin-Bragado%2C+I%2E%22">Martin-Bragado, I.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Barbolla%2C+J%2E%22">Barbolla, J.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Dec2004, Vol. 114-115, p135-140. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+doping%22">Semiconductor doping</searchLink><br /><searchLink fieldCode="DE" term="%22Solution+%28Chemistry%29%22">Solution (Chemistry)</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: An accurate knowledge of the behavior of Arsenic appearing at high concentrations during thermal processes is essential for today''s CMOS technology so that As is the most widely used n-type Si dopant in ultralarge scale integrated circuits. In spite of the large amount of successful research work devoted to reproducing As kinetics in Si, the level of complexity reached by Si device fabrication technologies claims for a more comprehensive physical modelling that, based on fundamental parameters of some basic As configurations could simultaneously account for aspects such as diffusion, electrical deactivation and amorphization/recrystallization after As implantation and annealing among others. We have used the atomistic kinetic Monte-Carlo simulator DADOS to develop a consistent physical model for As that includes a limited set of AsV clusters of different sizes and energies. Through a detailed modelling of Fermi level effects, we will discuss the main features of As behavior in Si such as: (i) intrinsic and extrinsic As diffusion; (ii) electrical deactivation at high As concentrations; (iii) annealing of As implanted profiles; and (iv) other striking features such as the interstitial supersaturation induced by rapid electrical deactivation of very high As concentrations at low temperatures. Finally, in order to test the model, this has been implemented with DADOS and compared with experiments, showing a good agreement in all the cases. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=17125092 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.mseb.2004.07.026 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 135 Subjects: – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Diffusion Type: general – SubjectFull: Semiconductor doping Type: general – SubjectFull: Solution (Chemistry) Type: general Titles: – TitleFull: Comprehensive, physically based modelling of As in Si Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Pinacho, R. – PersonEntity: Name: NameFull: Jaraiz, M. – PersonEntity: Name: NameFull: Castrillo, P. – PersonEntity: Name: NameFull: Rubio, J.E. – PersonEntity: Name: NameFull: Martin-Bragado, I. – PersonEntity: Name: NameFull: Barbolla, J. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 12 Text: Dec2004 Type: published Y: 2004 Identifiers: – Type: issn-print Value: 09215107 Numbering: – Type: volume Value: 114-115 Titles: – TitleFull: Materials Science & Engineering: B Type: main |
| ResultId | 1 |
