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Physical modeling of Fermi-level effects for decanano device process simulations

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Title: Physical modeling of Fermi-level effects for decanano device process simulations
Authors: Martin-Bragado, I. pedcas@tel.uva.es, Pinacho, R.1, Castrillo, P.1, Jaraiz, M.1, Rubio, J.E.1, Barbolla, J.1
Source: Materials Science & Engineering: B. Dec2004, Vol. 114-115, p284-289. 6p.
Subjects: Monte Carlo method, Stochastic processes, Native element minerals, Complementary metal oxide semiconductors
Abstract: Abstract: We report on a physically based Fermi-level modeling approach designed to be accurate and yet amenable to be implemented in a device-size process simulator. We use an atomistic kinetic Monte Carlo method in conjunction with a continuum treatment for carrier densities. The model includes: (i) charge reactions and electric bias according to the local Fermi-level; (ii) pairing and break-up reactions involving charged particles; (iii) clustering-related dopant deactivation; and (iv) Fermi level-dependent solubility. Degenerated statistics, band-gap narrowing, and damage-induced electrical compensation are also included. The parameters used for charged particles are in agreement with ab initio calculations and experimental results. This modeling scheme has proved to be very computationally efficient for realistic device-dimension process simulations. We present an illustrative set of simulation results for two common dopants, boron and arsenic, and discuss the potential of this approach for accurate process simulation of decanano CMOS devices. [Copyright &y& Elsevier]
Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 17125123
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Physical modeling of Fermi-level effects for decanano device process simulations
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Martin-Bragado%2C+I%2E%22">Martin-Bragado, I.</searchLink><i> pedcas@tel.uva.es</i><br /><searchLink fieldCode="AR" term="%22Pinacho%2C+R%2E%22">Pinacho, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Castrillo%2C+P%2E%22">Castrillo, P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Jaraiz%2C+M%2E%22">Jaraiz, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Rubio%2C+J%2EE%2E%22">Rubio, J.E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Barbolla%2C+J%2E%22">Barbolla, J.</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Dec2004, Vol. 114-115, p284-289. 6p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Monte+Carlo+method%22">Monte Carlo method</searchLink><br /><searchLink fieldCode="DE" term="%22Stochastic+processes%22">Stochastic processes</searchLink><br /><searchLink fieldCode="DE" term="%22Native+element+minerals%22">Native element minerals</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: We report on a physically based Fermi-level modeling approach designed to be accurate and yet amenable to be implemented in a device-size process simulator. We use an atomistic kinetic Monte Carlo method in conjunction with a continuum treatment for carrier densities. The model includes: (i) charge reactions and electric bias according to the local Fermi-level; (ii) pairing and break-up reactions involving charged particles; (iii) clustering-related dopant deactivation; and (iv) Fermi level-dependent solubility. Degenerated statistics, band-gap narrowing, and damage-induced electrical compensation are also included. The parameters used for charged particles are in agreement with ab initio calculations and experimental results. This modeling scheme has proved to be very computationally efficient for realistic device-dimension process simulations. We present an illustrative set of simulation results for two common dopants, boron and arsenic, and discuss the potential of this approach for accurate process simulation of decanano CMOS devices. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.mseb.2004.07.042
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 284
    Subjects:
      – SubjectFull: Monte Carlo method
        Type: general
      – SubjectFull: Stochastic processes
        Type: general
      – SubjectFull: Native element minerals
        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
    Titles:
      – TitleFull: Physical modeling of Fermi-level effects for decanano device process simulations
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Martin-Bragado, I.
      – PersonEntity:
          Name:
            NameFull: Pinacho, R.
      – PersonEntity:
          Name:
            NameFull: Castrillo, P.
      – PersonEntity:
          Name:
            NameFull: Jaraiz, M.
      – PersonEntity:
          Name:
            NameFull: Rubio, J.E.
      – PersonEntity:
          Name:
            NameFull: Barbolla, J.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 12
              Text: Dec2004
              Type: published
              Y: 2004
          Identifiers:
            – Type: issn-print
              Value: 09215107
          Numbering:
            – Type: volume
              Value: 114-115
          Titles:
            – TitleFull: Materials Science & Engineering: B
              Type: main
ResultId 1