Investigations of all-optical gates based on linear photonic crystals using the PSK technique and beam interference effect.
Saved in:
| Title: | Investigations of all-optical gates based on linear photonic crystals using the PSK technique and beam interference effect. |
|---|---|
| Authors: | Askarian, Asghar1 (AUTHOR), Parandin, Fariborz2 (AUTHOR) fa.parandin@iau.ac.ir |
| Source: | Electromagnetics. 2023, Vol. 43 Issue 5, p291-308. 18p. |
| Subjects: | Phase shift keying, NAND gates, Logic circuits, Finite differences, Plane wavefronts, Photonic crystals |
| Abstract: | In this paper, all optical OR, AND, NOR and NAND gates based on linear photonic crystals (LPhCs) have been numerically designed and simulated by the plane wave expansion (PWE) and finite difference time domain (FDTD) methods. The LPhC fundamental structure with cross-section of 114 μ m 2 is used for designing the proposed all optical gates (AOGATEs), which is composed of 15 × 23 cubic matrix of dielectric silicon rods in air substrate. The mechanism of the proposed AOGATEs is performed based on phase shift keying (PSK) technique and beam interference effect. Simulation results by FDTD approach illustrate the minimum contrast ratio of 8.88 and 10.31 dB for all optical AND/NOR and OR/NAND logic gates, respectively. Also, the minimum bit rate is obtained as 3.34 Tb/s for AND/NOR and 5 Tb/s for OR/NAND logic gates. [ABSTRACT FROM AUTHOR] |
| Copyright of Electromagnetics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| FullText | Links: – Type: pdflink Text: Availability: 1 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 171310355 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Investigations of all-optical gates based on linear photonic crystals using the PSK technique and beam interference effect. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Askarian%2C+Asghar%22">Askarian, Asghar</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Parandin%2C+Fariborz%22">Parandin, Fariborz</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> fa.parandin@iau.ac.ir</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Electromagnetics%22">Electromagnetics</searchLink>. 2023, Vol. 43 Issue 5, p291-308. 18p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Phase+shift+keying%22">Phase shift keying</searchLink><br /><searchLink fieldCode="DE" term="%22NAND+gates%22">NAND gates</searchLink><br /><searchLink fieldCode="DE" term="%22Logic+circuits%22">Logic circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Finite+differences%22">Finite differences</searchLink><br /><searchLink fieldCode="DE" term="%22Plane+wavefronts%22">Plane wavefronts</searchLink><br /><searchLink fieldCode="DE" term="%22Photonic+crystals%22">Photonic crystals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this paper, all optical OR, AND, NOR and NAND gates based on linear photonic crystals (LPhCs) have been numerically designed and simulated by the plane wave expansion (PWE) and finite difference time domain (FDTD) methods. The LPhC fundamental structure with cross-section of 114 μ m 2 is used for designing the proposed all optical gates (AOGATEs), which is composed of 15 × 23 cubic matrix of dielectric silicon rods in air substrate. The mechanism of the proposed AOGATEs is performed based on phase shift keying (PSK) technique and beam interference effect. Simulation results by FDTD approach illustrate the minimum contrast ratio of 8.88 and 10.31 dB for all optical AND/NOR and OR/NAND logic gates, respectively. Also, the minimum bit rate is obtained as 3.34 Tb/s for AND/NOR and 5 Tb/s for OR/NAND logic gates. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Electromagnetics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=171310355 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1080/02726343.2023.2244829 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 18 StartPage: 291 Subjects: – SubjectFull: Phase shift keying Type: general – SubjectFull: NAND gates Type: general – SubjectFull: Logic circuits Type: general – SubjectFull: Finite differences Type: general – SubjectFull: Plane wavefronts Type: general – SubjectFull: Photonic crystals Type: general Titles: – TitleFull: Investigations of all-optical gates based on linear photonic crystals using the PSK technique and beam interference effect. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Askarian, Asghar – PersonEntity: Name: NameFull: Parandin, Fariborz IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: 2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 02726343 Numbering: – Type: volume Value: 43 – Type: issue Value: 5 Titles: – TitleFull: Electromagnetics Type: main |
| ResultId | 1 |