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Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.

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Title: Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.
Authors: Shamakhov, Viktor1 (AUTHOR) shamakhov@mail.ioffe.ru, Slipchenko, Sergey1 (AUTHOR) serghpl@mail.ioffe.ru, Nikolaev, Dmitriy1 (AUTHOR), Smirnov, Alexander1 (AUTHOR), Eliseyev, Ilya1 (AUTHOR), Grishin, Artyom1 (AUTHOR), Kondratov, Matvei1 (AUTHOR), Shashkin, Ilya1 (AUTHOR), Pikhtin, Nikita1 (AUTHOR)
Source: Nanomaterials (2079-4991). Sep2023, Vol. 13 Issue 17, p2386. 13p.
Subjects: Chemical vapor deposition, Indium gallium arsenide, Epitaxy, Quantum wells, Potential barrier, Semiconductors
Abstract: We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980–990 nm emission wavelength). Selective area epitaxy of InGaAs quantum wells was performed on templates that had a patterned periodic structure consisting of a window (where epitaxial growth occurred) and a passive mask (where epitaxial growth was suppressed), each with a width of 100 µm for every element. Additionally, a selectively grown potential barrier layer was included, which was characterized by an almost parabolic curvature profile of the surface. We conducted a study on the influence of the curvature profile of the growth surface on the optical properties of InGaAs quantum wells and the spatial distribution of composition in an ultrawide window. Our results showed that, under fixed selective-area-epitaxy conditions, the composition of the InxGa1−xAs and the wavelength of the quantum-well emission changed across the width of the window. Our study demonstrates that increasing the curvature profile of the growth surface of highly strained quantum wells leads to a transition in the photoluminescence wavelength distribution profile across the window, from quasi-parabolic to inverted parabolic. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.
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  Data: <searchLink fieldCode="AR" term="%22Shamakhov%2C+Viktor%22">Shamakhov, Viktor</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> shamakhov@mail.ioffe.ru</i><br /><searchLink fieldCode="AR" term="%22Slipchenko%2C+Sergey%22">Slipchenko, Sergey</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> serghpl@mail.ioffe.ru</i><br /><searchLink fieldCode="AR" term="%22Nikolaev%2C+Dmitriy%22">Nikolaev, Dmitriy</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Smirnov%2C+Alexander%22">Smirnov, Alexander</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Eliseyev%2C+Ilya%22">Eliseyev, Ilya</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Grishin%2C+Artyom%22">Grishin, Artyom</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kondratov%2C+Matvei%22">Kondratov, Matvei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shashkin%2C+Ilya%22">Shashkin, Ilya</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pikhtin%2C+Nikita%22">Pikhtin, Nikita</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Sep2023, Vol. 13 Issue 17, p2386. 13p.
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  Data: <searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+gallium+arsenide%22">Indium gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+wells%22">Quantum wells</searchLink><br /><searchLink fieldCode="DE" term="%22Potential+barrier%22">Potential barrier</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink>
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  Data: We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980–990 nm emission wavelength). Selective area epitaxy of InGaAs quantum wells was performed on templates that had a patterned periodic structure consisting of a window (where epitaxial growth occurred) and a passive mask (where epitaxial growth was suppressed), each with a width of 100 µm for every element. Additionally, a selectively grown potential barrier layer was included, which was characterized by an almost parabolic curvature profile of the surface. We conducted a study on the influence of the curvature profile of the growth surface on the optical properties of InGaAs quantum wells and the spatial distribution of composition in an ultrawide window. Our results showed that, under fixed selective-area-epitaxy conditions, the composition of the InxGa1−xAs and the wavelength of the quantum-well emission changed across the width of the window. Our study demonstrates that increasing the curvature profile of the growth surface of highly strained quantum wells leads to a transition in the photoluminescence wavelength distribution profile across the window, from quasi-parabolic to inverted parabolic. [ABSTRACT FROM AUTHOR]
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  Label:
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  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano13172386
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        Text: English
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        PageCount: 13
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    Subjects:
      – SubjectFull: Chemical vapor deposition
        Type: general
      – SubjectFull: Indium gallium arsenide
        Type: general
      – SubjectFull: Epitaxy
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      – SubjectFull: Quantum wells
        Type: general
      – SubjectFull: Potential barrier
        Type: general
      – SubjectFull: Semiconductors
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      – TitleFull: Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.
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              M: 09
              Text: Sep2023
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