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Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application.

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Title: Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application.
Authors: Huang, Yuan-Chiu1 (AUTHOR), Lin, Yu-Xian1 (AUTHOR), Hsiung, Chien-Kang2 (AUTHOR), Hung, Tzu-Heng1 (AUTHOR), Chen, Kuan-Neng1,2 (AUTHOR) knchen@nycu.edu.tw
Source: Nanomaterials (2079-4991). Sep2023, Vol. 13 Issue 17, p2490. 19p.
Subjects: Three-dimensional integrated circuits, Hybrid securities, Copper, Sealing (Technology), Metal bonding, Interfacial bonding
Abstract: Advanced packaging technology has become more and more important in the semiconductor industry because of the benefits of higher I/O density compared to conventional soldering technology. In advanced packaging technology, copper–copper (Cu-Cu) bonding has become the preferred choice due to its excellent electrical and thermal properties. However, one of the major challenges of Cu-Cu bonding is the high thermal budget of the bonding process caused by Cu oxidation, which can result in wafer warpage and other back-end-of-line process issues in some cases. Thus, for specific applications, reducing the thermal budget and preventing Cu oxidation are important considerations in low-temperature hybrid bonding processes. This paper first reviews the advancements in low-temperature Cu-based bonding technologies for advanced packaging. Various low-temperature Cu-Cu bonding techniques such as surface pretreatment, surface activation, structure modification, and orientation control have been proposed and investigated. To overcome coplanarity issues of Cu pillars and insufficient gaps for filling, low-temperature Cu-Cu bonding used, but it is still challenging in fine-pitch applications. Therefore, low-temperature Cu/SiO2, Cu/SiCN, and Cu/polymer hybrid bonding have been developed for advanced packaging applications. Furthermore, we present a novel hybrid bonding scheme for metal/polymer interfaces that achieves good flatness and an excellent bonding interface without the need for the chemical mechanical polishing (CMP) process. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application.
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  Label: Authors
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  Data: <searchLink fieldCode="AR" term="%22Huang%2C+Yuan-Chiu%22">Huang, Yuan-Chiu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lin%2C+Yu-Xian%22">Lin, Yu-Xian</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hsiung%2C+Chien-Kang%22">Hsiung, Chien-Kang</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hung%2C+Tzu-Heng%22">Hung, Tzu-Heng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Kuan-Neng%22">Chen, Kuan-Neng</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> knchen@nycu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Sep2023, Vol. 13 Issue 17, p2490. 19p.
– Name: Subject
  Label: Subjects
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  Data: <searchLink fieldCode="DE" term="%22Three-dimensional+integrated+circuits%22">Three-dimensional integrated circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Hybrid+securities%22">Hybrid securities</searchLink><br /><searchLink fieldCode="DE" term="%22Copper%22">Copper</searchLink><br /><searchLink fieldCode="DE" term="%22Sealing+%28Technology%29%22">Sealing (Technology)</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+bonding%22">Metal bonding</searchLink><br /><searchLink fieldCode="DE" term="%22Interfacial+bonding%22">Interfacial bonding</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Advanced packaging technology has become more and more important in the semiconductor industry because of the benefits of higher I/O density compared to conventional soldering technology. In advanced packaging technology, copper–copper (Cu-Cu) bonding has become the preferred choice due to its excellent electrical and thermal properties. However, one of the major challenges of Cu-Cu bonding is the high thermal budget of the bonding process caused by Cu oxidation, which can result in wafer warpage and other back-end-of-line process issues in some cases. Thus, for specific applications, reducing the thermal budget and preventing Cu oxidation are important considerations in low-temperature hybrid bonding processes. This paper first reviews the advancements in low-temperature Cu-based bonding technologies for advanced packaging. Various low-temperature Cu-Cu bonding techniques such as surface pretreatment, surface activation, structure modification, and orientation control have been proposed and investigated. To overcome coplanarity issues of Cu pillars and insufficient gaps for filling, low-temperature Cu-Cu bonding used, but it is still challenging in fine-pitch applications. Therefore, low-temperature Cu/SiO2, Cu/SiCN, and Cu/polymer hybrid bonding have been developed for advanced packaging applications. Furthermore, we present a novel hybrid bonding scheme for metal/polymer interfaces that achieves good flatness and an excellent bonding interface without the need for the chemical mechanical polishing (CMP) process. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.3390/nano13172490
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      – Code: eng
        Text: English
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        PageCount: 19
        StartPage: 2490
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      – SubjectFull: Three-dimensional integrated circuits
        Type: general
      – SubjectFull: Hybrid securities
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      – SubjectFull: Copper
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      – SubjectFull: Sealing (Technology)
        Type: general
      – SubjectFull: Metal bonding
        Type: general
      – SubjectFull: Interfacial bonding
        Type: general
    Titles:
      – TitleFull: Cu-Based Thermocompression Bonding and Cu/Dielectric Hybrid Bonding for Three-Dimensional Integrated Circuits (3D ICs) Application.
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            NameFull: Huang, Yuan-Chiu
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            NameFull: Lin, Yu-Xian
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            NameFull: Hsiung, Chien-Kang
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            NameFull: Hung, Tzu-Heng
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            NameFull: Chen, Kuan-Neng
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            – D: 01
              M: 09
              Text: Sep2023
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              Y: 2023
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