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Structural and Electrical Transport Features of Bi4Ti2.9Zr0.1O12.

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Title: Structural and Electrical Transport Features of Bi4Ti2.9Zr0.1O12.
Authors: Auromun, Krishna1 (AUTHOR), Pradhan, Premananda1 (AUTHOR), Choudhary, Ram Naresh Prasad1 (AUTHOR)
Source: Integrated Ferroelectrics. 2023, Vol. 237 Issue 1, p240-250. 11p.
Subjects: Temperature coefficient of electric resistance, Bismuth, Bismuth titanate, Space charge, Permittivity, Hysteresis loop, Chemical formulas
Abstract: This paper reports the structural, dielectric, and electrical properties of Zr (10%) substituted bismuth titanate with the chemical formula Bi4Ti2.9Zr0.1O12. The material possesses a distorted orthorhombic structure and space group of B2cb at room temperature. The Zr-substituted bismuth titanate has a high Curie temperature and good dielectric constant. In any case, the dielectric constant of the Zr doped ceramic is higher than that of pure bismuth titanate. The study of impedance properties revealed the relaxation process, negative temperature coefficient of resistance behavior, grain and grain boundary formation, and the space charge effect in the high-frequency region of the material. The AC conductivity study explained the activation of charge carriers and the associated hopping mechanisms. A smaller activation energy (Ea) is observed at the low temperatures than in the high-temperature range. The ferroelectric property is confirmed through the P ∼ E hysteresis loop of the material at room temperature. [ABSTRACT FROM AUTHOR]
Copyright of Integrated Ferroelectrics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 171952546
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Label: Title
  Group: Ti
  Data: Structural and Electrical Transport Features of Bi<subscript>4</subscript>Ti<subscript>2.9</subscript>Zr<subscript>0.1</subscript>O<subscript>12</subscript>.
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  Data: <searchLink fieldCode="AR" term="%22Auromun%2C+Krishna%22">Auromun, Krishna</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pradhan%2C+Premananda%22">Pradhan, Premananda</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Choudhary%2C+Ram+Naresh+Prasad%22">Choudhary, Ram Naresh Prasad</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Integrated+Ferroelectrics%22">Integrated Ferroelectrics</searchLink>. 2023, Vol. 237 Issue 1, p240-250. 11p.
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  Data: <searchLink fieldCode="DE" term="%22Temperature+coefficient+of+electric+resistance%22">Temperature coefficient of electric resistance</searchLink><br /><searchLink fieldCode="DE" term="%22Bismuth%22">Bismuth</searchLink><br /><searchLink fieldCode="DE" term="%22Bismuth+titanate%22">Bismuth titanate</searchLink><br /><searchLink fieldCode="DE" term="%22Space+charge%22">Space charge</searchLink><br /><searchLink fieldCode="DE" term="%22Permittivity%22">Permittivity</searchLink><br /><searchLink fieldCode="DE" term="%22Hysteresis+loop%22">Hysteresis loop</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+formulas%22">Chemical formulas</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This paper reports the structural, dielectric, and electrical properties of Zr (10%) substituted bismuth titanate with the chemical formula Bi4Ti2.9Zr0.1O12. The material possesses a distorted orthorhombic structure and space group of B2cb at room temperature. The Zr-substituted bismuth titanate has a high Curie temperature and good dielectric constant. In any case, the dielectric constant of the Zr doped ceramic is higher than that of pure bismuth titanate. The study of impedance properties revealed the relaxation process, negative temperature coefficient of resistance behavior, grain and grain boundary formation, and the space charge effect in the high-frequency region of the material. The AC conductivity study explained the activation of charge carriers and the associated hopping mechanisms. A smaller activation energy (Ea) is observed at the low temperatures than in the high-temperature range. The ferroelectric property is confirmed through the P ∼ E hysteresis loop of the material at room temperature. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Integrated Ferroelectrics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1080/10584587.2023.2239094
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 11
        StartPage: 240
    Subjects:
      – SubjectFull: Temperature coefficient of electric resistance
        Type: general
      – SubjectFull: Bismuth
        Type: general
      – SubjectFull: Bismuth titanate
        Type: general
      – SubjectFull: Space charge
        Type: general
      – SubjectFull: Permittivity
        Type: general
      – SubjectFull: Hysteresis loop
        Type: general
      – SubjectFull: Chemical formulas
        Type: general
    Titles:
      – TitleFull: Structural and Electrical Transport Features of Bi4Ti2.9Zr0.1O12.
        Type: main
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            NameFull: Auromun, Krishna
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            NameFull: Pradhan, Premananda
      – PersonEntity:
          Name:
            NameFull: Choudhary, Ram Naresh Prasad
    IsPartOfRelationships:
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          Dates:
            – D: 01
              M: 09
              Text: 2023
              Type: published
              Y: 2023
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              Value: 10584587
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              Value: 237
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              Value: 1
          Titles:
            – TitleFull: Integrated Ferroelectrics
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