Editorial for the Special Issue "Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29".
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| Title: | Editorial for the Special Issue "Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29". |
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| Authors: | Chen, Kunji1 (AUTHOR) kjchen@nju.edu.cn, Oda, Shunri2 (AUTHOR) soda@pe.titech.ac.jp, Yu, Linwei3 (AUTHOR) yulinwei@nju.edu.cn |
| Source: | Nanomaterials (2079-4991). Sep2023, Vol. 13 Issue 18, p2594. 4p. |
| Subjects: | Amorphous semiconductors, Transition metal oxides, Phase change memory |
| Abstract: | In order to suppress the crosstalk and provide a high on-current to melt the incorporated phase change materials in the PCRAM array and 3D stacking chips, the authors [[8]] investigated the influence of Si concentration on the electrical properties of the Si-Te ovonic threshold selector. 36986003 3 Wang K., He Q., Yang D., Pi X. Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots. 10.3390/nano13010121 2 Sun T., Li D., Chen J., Wang Y., Han J., Zhu T., Li W., Xu J., Chen K. Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode. [Extracted from the article] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 172412002 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Editorial for the Special Issue "Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29". – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Chen%2C+Kunji%22">Chen, Kunji</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> kjchen@nju.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Oda%2C+Shunri%22">Oda, Shunri</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> soda@pe.titech.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Yu%2C+Linwei%22">Yu, Linwei</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> yulinwei@nju.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Sep2023, Vol. 13 Issue 18, p2594. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Amorphous+semiconductors%22">Amorphous semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Transition+metal+oxides%22">Transition metal oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+change+memory%22">Phase change memory</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In order to suppress the crosstalk and provide a high on-current to melt the incorporated phase change materials in the PCRAM array and 3D stacking chips, the authors [[8]] investigated the influence of Si concentration on the electrical properties of the Si-Te ovonic threshold selector. 36986003 3 Wang K., He Q., Yang D., Pi X. Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots. 10.3390/nano13010121 2 Sun T., Li D., Chen J., Wang Y., Han J., Zhu T., Li W., Xu J., Chen K. Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode. [Extracted from the article] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=172412002 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano13182594 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 2594 Subjects: – SubjectFull: Amorphous semiconductors Type: general – SubjectFull: Transition metal oxides Type: general – SubjectFull: Phase change memory Type: general Titles: – TitleFull: Editorial for the Special Issue "Amorphous and Nanocrystalline Semiconductors: Selected Papers from ICANS 29". Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen, Kunji – PersonEntity: Name: NameFull: Oda, Shunri – PersonEntity: Name: NameFull: Yu, Linwei IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 09 Text: Sep2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 13 – Type: issue Value: 18 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
| ResultId | 1 |
