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Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems.

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Title: Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems.
Authors: Luo, Yu-Tang1 (AUTHOR) r09522552@ntu.edu.tw, Zhou, Zhehan1 (AUTHOR) r10522549@ntu.edu.tw, Wu, Cheng-Yang1 (AUTHOR) r09522520@ntu.edu.tw, Chiu, Li-Ching1 (AUTHOR) r09522531@ntu.edu.tw, Juang, Jia-Yang1,2 (AUTHOR) jiayang@ntu.edu.tw
Source: Nanomaterials (2079-4991). Oct2023, Vol. 13 Issue 19, p2691. 13p.
Subjects: Plasma jets, Atmospheric pressure, Zinc oxide films, Zinc oxide thin films, Thin films, Transparent electronics, Electrical resistivity
Abstract: Co-doped ZnO thin films have attracted much attention in the field of transparent conductive oxides (TCOs) in solar cells, displays, and other transparent electronics. Unlike conventional single-doped ZnO, co-doped ZnO utilizes two different dopant elements, offering enhanced electrical properties and more controllable optical properties, including transmittance and haze; however, most previous studies focused on the electrical properties, with less attention paid to obtaining high haze using co-doping. Here, we prepare high-haze Ga- and Zr-co-doped ZnO (GZO:Zr or ZGZO) using atmospheric pressure plasma jet (APPJ) systems. We conduct a detailed analysis to examine the interplay between Zr concentrations and film properties. UV-Vis spectroscopy shows a remarkable haze factor increase of 7.19% to 34.8% (+384%) for the films prepared with 2 at% Zr and 8 at% Ga precursor concentrations. EDS analysis reveals Zr accumulation on larger and smaller particles, while SIMS links particle abundance to impurity uptake and altered electrical properties. XPS identifies Zr mainly as ZrO2 because of lattice stress from Zr doping, forming clusters at lattice boundaries and corroborating the SEM findings. Our work presents a new way to fabricate Ga- and Zr-co-doped ZnO for applications that require low electrical resistivity, high visible transparency, and high haze. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
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  Data: Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems.
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  Data: <searchLink fieldCode="AR" term="%22Luo%2C+Yu-Tang%22">Luo, Yu-Tang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> r09522552@ntu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Zhou%2C+Zhehan%22">Zhou, Zhehan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> r10522549@ntu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Wu%2C+Cheng-Yang%22">Wu, Cheng-Yang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> r09522520@ntu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Chiu%2C+Li-Ching%22">Chiu, Li-Ching</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> r09522531@ntu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Juang%2C+Jia-Yang%22">Juang, Jia-Yang</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> jiayang@ntu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Oct2023, Vol. 13 Issue 19, p2691. 13p.
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  Data: <searchLink fieldCode="DE" term="%22Plasma+jets%22">Plasma jets</searchLink><br /><searchLink fieldCode="DE" term="%22Atmospheric+pressure%22">Atmospheric pressure</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide+films%22">Zinc oxide films</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide+thin+films%22">Zinc oxide thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Transparent+electronics%22">Transparent electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Electrical+resistivity%22">Electrical resistivity</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Co-doped ZnO thin films have attracted much attention in the field of transparent conductive oxides (TCOs) in solar cells, displays, and other transparent electronics. Unlike conventional single-doped ZnO, co-doped ZnO utilizes two different dopant elements, offering enhanced electrical properties and more controllable optical properties, including transmittance and haze; however, most previous studies focused on the electrical properties, with less attention paid to obtaining high haze using co-doping. Here, we prepare high-haze Ga- and Zr-co-doped ZnO (GZO:Zr or ZGZO) using atmospheric pressure plasma jet (APPJ) systems. We conduct a detailed analysis to examine the interplay between Zr concentrations and film properties. UV-Vis spectroscopy shows a remarkable haze factor increase of 7.19% to 34.8% (+384%) for the films prepared with 2 at% Zr and 8 at% Ga precursor concentrations. EDS analysis reveals Zr accumulation on larger and smaller particles, while SIMS links particle abundance to impurity uptake and altered electrical properties. XPS identifies Zr mainly as ZrO2 because of lattice stress from Zr doping, forming clusters at lattice boundaries and corroborating the SEM findings. Our work presents a new way to fabricate Ga- and Zr-co-doped ZnO for applications that require low electrical resistivity, high visible transparency, and high haze. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano13192691
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        Text: English
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        PageCount: 13
        StartPage: 2691
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      – SubjectFull: Plasma jets
        Type: general
      – SubjectFull: Atmospheric pressure
        Type: general
      – SubjectFull: Zinc oxide films
        Type: general
      – SubjectFull: Zinc oxide thin films
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      – SubjectFull: Thin films
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      – SubjectFull: Transparent electronics
        Type: general
      – SubjectFull: Electrical resistivity
        Type: general
    Titles:
      – TitleFull: Analysis of Hazy Ga- and Zr-Co-Doped Zinc Oxide Films Prepared with Atmospheric Pressure Plasma Jet Systems.
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            NameFull: Luo, Yu-Tang
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            NameFull: Zhou, Zhehan
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            – D: 01
              M: 10
              Text: Oct2023
              Type: published
              Y: 2023
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