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Oxidation resistance and mechanical properties of AlTiZrHfTa(-N) high entropy films deposited by reactive magnetron sputtering.

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Title: Oxidation resistance and mechanical properties of AlTiZrHfTa(-N) high entropy films deposited by reactive magnetron sputtering.
Authors: Touaibia, Djallel Eddine1,2 (AUTHOR) djallel_eddine.touaibia@utt.fr, Achache, Sofiane1,2 (AUTHOR), Bouissil, Abdelhakim1,2 (AUTHOR), Ghanbaja, Jaafar3 (AUTHOR), Migot, Sylvie3 (AUTHOR), Yazdi, Mohammad Arab Pour4,5 (AUTHOR), Schuster, Frederic6 (AUTHOR), Panicaud, Benoit7 (AUTHOR), Sanchette, Frederic1,2 (AUTHOR), El Garah, Mohamed1,2 (AUTHOR) mohamed.el_garah@utt.fr
Source: Journal of Alloys & Compounds. Dec2023, Vol. 969, pN.PAG-N.PAG. 1p.
Subjects: Magnetron sputtering, Reactive sputtering, DC sputtering, Face centered cubic structure, Metallic films, Entropy
Abstract: (AlTiZrHfTa) 1−x N x refractory high entropy films (RHEFs) were deposited by direct current magnetron sputtering in various nitrogen ratios (R N2 = N 2 /(Ar+N 2)) on flat glass, silicon and sapphire substrates. The nitrogen-free film is amorphous while the nitrides are single-phased solid solutions with Face-Centered Cubic (FCC) structures. The hardness increases from 6.4 GPa for the nitrogen-free film to 25.3 GPa for the film obtained at R N2 = 20%. A preferred orientation from (111) to (200) occurs when R N2 increases from 5% to 50%. H/E and H3/H2 reports show high values for the film deposited at R N2 = 20% compared to that at 10%. However, this latter has the best compromise in terms of mechanical properties related to a lower residual stress value. The nitrides films obtained with R N2 ≥ 5%, are thermally stable at 800 °C for 3 h under vacuum. Compared to the metallic film they show an improved oxidation resistance. In fact, the K p constant of the nitride (R N2 =20%) is lower (1.22 10−7 g2 cm−4 h−1) than that of the nitrogen-free film (1.77 10−6 g2 cm−4 h−1). The corresponding activation energies (E a) are respectively calculated at 94.8 KJ. mol−1 and 45.5 KJ.mol−1. After oxidation process, TEM analysis reveal the formation of homogeneous mixed oxide. • AlTiZrHfTa(-N) films were deposited by reactive DC magnetron sputtering. • The metallic film is amorphous, while the nitrides exhibit FCC phase structure. • The film deposited at R N2 = 10% had the best compromise of mechanical properties. • The nitrides exhibit a better oxidation resistance compared to the metallic film. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Alloys & Compounds is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 173233690
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  Label: Title
  Group: Ti
  Data: Oxidation resistance and mechanical properties of AlTiZrHfTa(-N) high entropy films deposited by reactive magnetron sputtering.
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  Data: <searchLink fieldCode="AR" term="%22Touaibia%2C+Djallel+Eddine%22">Touaibia, Djallel Eddine</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> djallel_eddine.touaibia@utt.fr</i><br /><searchLink fieldCode="AR" term="%22Achache%2C+Sofiane%22">Achache, Sofiane</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bouissil%2C+Abdelhakim%22">Bouissil, Abdelhakim</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ghanbaja%2C+Jaafar%22">Ghanbaja, Jaafar</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Migot%2C+Sylvie%22">Migot, Sylvie</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yazdi%2C+Mohammad+Arab+Pour%22">Yazdi, Mohammad Arab Pour</searchLink><relatesTo>4,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Schuster%2C+Frederic%22">Schuster, Frederic</searchLink><relatesTo>6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Panicaud%2C+Benoit%22">Panicaud, Benoit</searchLink><relatesTo>7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sanchette%2C+Frederic%22">Sanchette, Frederic</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22El+Garah%2C+Mohamed%22">El Garah, Mohamed</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> mohamed.el_garah@utt.fr</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Alloys+%26+Compounds%22">Journal of Alloys & Compounds</searchLink>. Dec2023, Vol. 969, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Reactive+sputtering%22">Reactive sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22DC+sputtering%22">DC sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Face+centered+cubic+structure%22">Face centered cubic structure</searchLink><br /><searchLink fieldCode="DE" term="%22Metallic+films%22">Metallic films</searchLink><br /><searchLink fieldCode="DE" term="%22Entropy%22">Entropy</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: (AlTiZrHfTa) 1−x N x refractory high entropy films (RHEFs) were deposited by direct current magnetron sputtering in various nitrogen ratios (R N2 = N 2 /(Ar+N 2)) on flat glass, silicon and sapphire substrates. The nitrogen-free film is amorphous while the nitrides are single-phased solid solutions with Face-Centered Cubic (FCC) structures. The hardness increases from 6.4 GPa for the nitrogen-free film to 25.3 GPa for the film obtained at R N2 = 20%. A preferred orientation from (111) to (200) occurs when R N2 increases from 5% to 50%. H/E and H3/H2 reports show high values for the film deposited at R N2 = 20% compared to that at 10%. However, this latter has the best compromise in terms of mechanical properties related to a lower residual stress value. The nitrides films obtained with R N2 ≥ 5%, are thermally stable at 800 °C for 3 h under vacuum. Compared to the metallic film they show an improved oxidation resistance. In fact, the K p constant of the nitride (R N2 =20%) is lower (1.22 10−7 g2 cm−4 h−1) than that of the nitrogen-free film (1.77 10−6 g2 cm−4 h−1). The corresponding activation energies (E a) are respectively calculated at 94.8 KJ. mol−1 and 45.5 KJ.mol−1. After oxidation process, TEM analysis reveal the formation of homogeneous mixed oxide. • AlTiZrHfTa(-N) films were deposited by reactive DC magnetron sputtering. • The metallic film is amorphous, while the nitrides exhibit FCC phase structure. • The film deposited at R N2 = 10% had the best compromise of mechanical properties. • The nitrides exhibit a better oxidation resistance compared to the metallic film. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Alloys & Compounds is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.jallcom.2023.172397
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Magnetron sputtering
        Type: general
      – SubjectFull: Reactive sputtering
        Type: general
      – SubjectFull: DC sputtering
        Type: general
      – SubjectFull: Face centered cubic structure
        Type: general
      – SubjectFull: Metallic films
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      – SubjectFull: Entropy
        Type: general
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      – TitleFull: Oxidation resistance and mechanical properties of AlTiZrHfTa(-N) high entropy films deposited by reactive magnetron sputtering.
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              Text: Dec2023
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