Oxidation resistance and mechanical properties of AlTiZrHfTa(-N) high entropy films deposited by reactive magnetron sputtering.
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| Title: | Oxidation resistance and mechanical properties of AlTiZrHfTa(-N) high entropy films deposited by reactive magnetron sputtering. |
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| Authors: | Touaibia, Djallel Eddine1,2 (AUTHOR) djallel_eddine.touaibia@utt.fr, Achache, Sofiane1,2 (AUTHOR), Bouissil, Abdelhakim1,2 (AUTHOR), Ghanbaja, Jaafar3 (AUTHOR), Migot, Sylvie3 (AUTHOR), Yazdi, Mohammad Arab Pour4,5 (AUTHOR), Schuster, Frederic6 (AUTHOR), Panicaud, Benoit7 (AUTHOR), Sanchette, Frederic1,2 (AUTHOR), El Garah, Mohamed1,2 (AUTHOR) mohamed.el_garah@utt.fr |
| Source: | Journal of Alloys & Compounds. Dec2023, Vol. 969, pN.PAG-N.PAG. 1p. |
| Subjects: | Magnetron sputtering, Reactive sputtering, DC sputtering, Face centered cubic structure, Metallic films, Entropy |
| Abstract: | (AlTiZrHfTa) 1−x N x refractory high entropy films (RHEFs) were deposited by direct current magnetron sputtering in various nitrogen ratios (R N2 = N 2 /(Ar+N 2)) on flat glass, silicon and sapphire substrates. The nitrogen-free film is amorphous while the nitrides are single-phased solid solutions with Face-Centered Cubic (FCC) structures. The hardness increases from 6.4 GPa for the nitrogen-free film to 25.3 GPa for the film obtained at R N2 = 20%. A preferred orientation from (111) to (200) occurs when R N2 increases from 5% to 50%. H/E and H3/H2 reports show high values for the film deposited at R N2 = 20% compared to that at 10%. However, this latter has the best compromise in terms of mechanical properties related to a lower residual stress value. The nitrides films obtained with R N2 ≥ 5%, are thermally stable at 800 °C for 3 h under vacuum. Compared to the metallic film they show an improved oxidation resistance. In fact, the K p constant of the nitride (R N2 =20%) is lower (1.22 10−7 g2 cm−4 h−1) than that of the nitrogen-free film (1.77 10−6 g2 cm−4 h−1). The corresponding activation energies (E a) are respectively calculated at 94.8 KJ. mol−1 and 45.5 KJ.mol−1. After oxidation process, TEM analysis reveal the formation of homogeneous mixed oxide. • AlTiZrHfTa(-N) films were deposited by reactive DC magnetron sputtering. • The metallic film is amorphous, while the nitrides exhibit FCC phase structure. • The film deposited at R N2 = 10% had the best compromise of mechanical properties. • The nitrides exhibit a better oxidation resistance compared to the metallic film. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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