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Large-Area MoS 2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.

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Title: Large-Area MoS 2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.
Authors: Španková, Marianna1 (AUTHOR) marianna.spankova@savba.sk, Chromik, Štefan1 (AUTHOR) edmund.dobrocka@savba.sk, Dobročka, Edmund1 (AUTHOR) lenka.pribusova-slusna@savba.sk, Pribusová Slušná, Lenka1 (AUTHOR) marcel.talacko@savba.sk, Talacko, Marcel1 (AUTHOR), Gregor, Maroš2 (AUTHOR) maros.gregor@fmph.uniba.sk, Pécz, Béla3 (AUTHOR) pecz.bela@ek.hun-ren.hu, Koos, Antal3 (AUTHOR) koos.antal@ek.hun-ren.hu, Greco, Giuseppe4 (AUTHOR) giuseppe.greco@imm.cnr.it, Panasci, Salvatore Ethan4 (AUTHOR) salvatoreethan.panasci@imm.cnr.it, Fiorenza, Patrick4 (AUTHOR) patrick.fiorenza@imm.cnr.it, Roccaforte, Fabrizio4 (AUTHOR) fabrizio.roccaforte@imm.cnr.it, Cordier, Yvon5 (AUTHOR) yvon.cordier@crhea.cnrs.fr, Frayssinet, Eric5 (AUTHOR) eric.frayssinet@crhea.cnrs.fr, Giannazzo, Filippo4 (AUTHOR) filippo.giannazzo@imm.cnr.it
Source: Nanomaterials (2079-4991). Nov2023, Vol. 13 Issue 21, p2837. 13p.
Subjects: Pulsed laser deposition, Sapphires, Gallium nitride, X-ray photoelectron spectroscopy, Semiconductor films, Atomic force microscopy
Abstract: In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction measurements, and high-resolution transmission electron microscopy. According to X-ray diffraction studies, the films exhibit epitaxial growth, indicating a good in-plane alignment. Furthermore, the films demonstrate uniform thickness on large areas, as confirmed by Raman spectroscopy. The lateral electrical current transport of the MoS2 grown on sapphire was investigated by temperature (T)-dependent sheet resistance and Hall effect measurements, showing a high n-type doping of the semiconducting films (ns from ~1 × 1013 to ~3.4 × 1013 cm−2 from T = 300 K to 500 K), with a donor ionization energy of Ei = 93 ± 8 meV and a mobility decreasing with T. Finally, the vertical current injection across the MoS2/GaN heterojunction was investigated by means of conductive atomic force microscopy, showing the rectifying behavior of the I-V characteristics with a Schottky barrier height of ϕB ≈ 0.36 eV. The obtained results pave the way for the scalable application of PLD-grown MoS2 on GaN in electronics/optoelectronics. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Large-Area MoS 2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.
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  Data: <searchLink fieldCode="AR" term="%22Španková%2C+Marianna%22">Španková, Marianna</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> marianna.spankova@savba.sk</i><br /><searchLink fieldCode="AR" term="%22Chromik%2C+Štefan%22">Chromik, Štefan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> edmund.dobrocka@savba.sk</i><br /><searchLink fieldCode="AR" term="%22Dobročka%2C+Edmund%22">Dobročka, Edmund</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> lenka.pribusova-slusna@savba.sk</i><br /><searchLink fieldCode="AR" term="%22Pribusová+Slušná%2C+Lenka%22">Pribusová Slušná, Lenka</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> marcel.talacko@savba.sk</i><br /><searchLink fieldCode="AR" term="%22Talacko%2C+Marcel%22">Talacko, Marcel</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gregor%2C+Maroš%22">Gregor, Maroš</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> maros.gregor@fmph.uniba.sk</i><br /><searchLink fieldCode="AR" term="%22Pécz%2C+Béla%22">Pécz, Béla</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> pecz.bela@ek.hun-ren.hu</i><br /><searchLink fieldCode="AR" term="%22Koos%2C+Antal%22">Koos, Antal</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> koos.antal@ek.hun-ren.hu</i><br /><searchLink fieldCode="AR" term="%22Greco%2C+Giuseppe%22">Greco, Giuseppe</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> giuseppe.greco@imm.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Panasci%2C+Salvatore+Ethan%22">Panasci, Salvatore Ethan</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> salvatoreethan.panasci@imm.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Fiorenza%2C+Patrick%22">Fiorenza, Patrick</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> patrick.fiorenza@imm.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Roccaforte%2C+Fabrizio%22">Roccaforte, Fabrizio</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> fabrizio.roccaforte@imm.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Cordier%2C+Yvon%22">Cordier, Yvon</searchLink><relatesTo>5</relatesTo> (AUTHOR)<i> yvon.cordier@crhea.cnrs.fr</i><br /><searchLink fieldCode="AR" term="%22Frayssinet%2C+Eric%22">Frayssinet, Eric</searchLink><relatesTo>5</relatesTo> (AUTHOR)<i> eric.frayssinet@crhea.cnrs.fr</i><br /><searchLink fieldCode="AR" term="%22Giannazzo%2C+Filippo%22">Giannazzo, Filippo</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> filippo.giannazzo@imm.cnr.it</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Nov2023, Vol. 13 Issue 21, p2837. 13p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Pulsed+laser+deposition%22">Pulsed laser deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Sapphires%22">Sapphires</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+nitride%22">Gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+films%22">Semiconductor films</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+force+microscopy%22">Atomic force microscopy</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction measurements, and high-resolution transmission electron microscopy. According to X-ray diffraction studies, the films exhibit epitaxial growth, indicating a good in-plane alignment. Furthermore, the films demonstrate uniform thickness on large areas, as confirmed by Raman spectroscopy. The lateral electrical current transport of the MoS2 grown on sapphire was investigated by temperature (T)-dependent sheet resistance and Hall effect measurements, showing a high n-type doping of the semiconducting films (ns from ~1 × 1013 to ~3.4 × 1013 cm−2 from T = 300 K to 500 K), with a donor ionization energy of Ei = 93 ± 8 meV and a mobility decreasing with T. Finally, the vertical current injection across the MoS2/GaN heterojunction was investigated by means of conductive atomic force microscopy, showing the rectifying behavior of the I-V characteristics with a Schottky barrier height of ϕB ≈ 0.36 eV. The obtained results pave the way for the scalable application of PLD-grown MoS2 on GaN in electronics/optoelectronics. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano13212837
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      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 2837
    Subjects:
      – SubjectFull: Pulsed laser deposition
        Type: general
      – SubjectFull: Sapphires
        Type: general
      – SubjectFull: Gallium nitride
        Type: general
      – SubjectFull: X-ray photoelectron spectroscopy
        Type: general
      – SubjectFull: Semiconductor films
        Type: general
      – SubjectFull: Atomic force microscopy
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      – TitleFull: Large-Area MoS 2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.
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              Text: Nov2023
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