Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection
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| Title: | Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection |
|---|---|
| Authors: | Spadafora, M.1, Terrasi, A.1 aterrasi@ct.infn.it, Mirabella, S.1, Piro, A.1, Grimaldi, M.G.1, Scalese, S.2, Napolitani, E.3, Di Marino, M.3, De Salvador, D.3, Carnera, A.3 |
| Source: | Materials Science in Semiconductor Processing. Feb2005, Vol. 8 Issue 1-3, p219-224. 6p. |
| Subjects: | Oxidation, Dislocations in crystals, Solution (Chemistry), Mass spectrometry |
| Abstract: | Abstract: In this paper we compare dry oxidation, at different temperatures and oxidation times, on epitaxial SiGe films and Si reference samples. Rapid and conventional furnaces and several analysis techniques, such as Rutherford backscattering spectrometry, transmission electron microscopy and secondary ion mass spectroscopy, have been used to process and characterize our samples. We focused the attention on the thin oxide regime (3–30nm), pointing out substantial differences between Si and SiGe in the oxidation kinetics and point defect injection. In fact, SiGe films show an oxidation rate enhancement with respect to Si, previously reported by other groups only for wet ambient. The enhancement, however, decreases with temperature and oxide thickness. From our data we estimated the activation energies for Si and SiGe oxidation in our range of thickness. We also show that Ge segregates behind the oxide forming a Ge-rich layer, free of extended defects. Finally, the study of the broadening of thin boron spikes, introduced in some of our samples, has allowed us to measure the interstitial injection during the oxidation and to demonstrate that it is strongly reduced in the case of SiGe samples. [Copyright &y& Elsevier] |
| Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 17358391 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Spadafora%2C+M%2E%22">Spadafora, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Terrasi%2C+A%2E%22">Terrasi, A.</searchLink><relatesTo>1</relatesTo><i> aterrasi@ct.infn.it</i><br /><searchLink fieldCode="AR" term="%22Mirabella%2C+S%2E%22">Mirabella, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Piro%2C+A%2E%22">Piro, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Grimaldi%2C+M%2EG%2E%22">Grimaldi, M.G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Scalese%2C+S%2E%22">Scalese, S.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Napolitani%2C+E%2E%22">Napolitani, E.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Di+Marino%2C+M%2E%22">Di Marino, M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22De+Salvador%2C+D%2E%22">De Salvador, D.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Carnera%2C+A%2E%22">Carnera, A.</searchLink><relatesTo>3</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>. Feb2005, Vol. 8 Issue 1-3, p219-224. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Oxidation%22">Oxidation</searchLink><br /><searchLink fieldCode="DE" term="%22Dislocations+in+crystals%22">Dislocations in crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Solution+%28Chemistry%29%22">Solution (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Mass+spectrometry%22">Mass spectrometry</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: In this paper we compare dry oxidation, at different temperatures and oxidation times, on epitaxial SiGe films and Si reference samples. Rapid and conventional furnaces and several analysis techniques, such as Rutherford backscattering spectrometry, transmission electron microscopy and secondary ion mass spectroscopy, have been used to process and characterize our samples. We focused the attention on the thin oxide regime (3–30nm), pointing out substantial differences between Si and SiGe in the oxidation kinetics and point defect injection. In fact, SiGe films show an oxidation rate enhancement with respect to Si, previously reported by other groups only for wet ambient. The enhancement, however, decreases with temperature and oxide thickness. From our data we estimated the activation energies for Si and SiGe oxidation in our range of thickness. We also show that Ge segregates behind the oxide forming a Ge-rich layer, free of extended defects. Finally, the study of the broadening of thin boron spikes, introduced in some of our samples, has allowed us to measure the interstitial injection during the oxidation and to demonstrate that it is strongly reduced in the case of SiGe samples. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.mssp.2004.09.032 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 219 Subjects: – SubjectFull: Oxidation Type: general – SubjectFull: Dislocations in crystals Type: general – SubjectFull: Solution (Chemistry) Type: general – SubjectFull: Mass spectrometry Type: general Titles: – TitleFull: Dry oxidation of MBE-SiGe films: rate enhancement, Ge redistribution and defect injection Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Spadafora, M. – PersonEntity: Name: NameFull: Terrasi, A. – PersonEntity: Name: NameFull: Mirabella, S. – PersonEntity: Name: NameFull: Piro, A. – PersonEntity: Name: NameFull: Grimaldi, M.G. – PersonEntity: Name: NameFull: Scalese, S. – PersonEntity: Name: NameFull: Napolitani, E. – PersonEntity: Name: NameFull: Di Marino, M. – PersonEntity: Name: NameFull: De Salvador, D. – PersonEntity: Name: NameFull: Carnera, A. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 02 Text: Feb2005 Type: published Y: 2005 Identifiers: – Type: issn-print Value: 13698001 Numbering: – Type: volume Value: 8 – Type: issue Value: 1-3 Titles: – TitleFull: Materials Science in Semiconductor Processing Type: main |
| ResultId | 1 |
