Generic analytical models of memelement and inverse memelement with time-dependent memory effects.
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| Title: | Generic analytical models of memelement and inverse memelement with time-dependent memory effects. |
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| Authors: | Banchuin, Rawid1 (AUTHOR) rawid.ban@siam.edu |
| Source: | COMPEL. 2023, Vol. 42 Issue 6, p1669-1689. 21p. |
| Subjects: | Memory |
| Abstract: | Purpose: The purpose of this paper is to originally present the generic analytical models of memelement and inverse memelement with time-dependent memory effect. Design/methodology/approach: The variable order forward Grünwald–Letnikov fractional derivative and the memristor and inverse memristor models proposed by Fouda et al. have been adopted as the basis. Both analytical and numerical studies have been conducted. The applications to the candidate practical memristor and inverse memelements have also been presented. Findings: The generic analytical models of memelement and inverse memelement with time-dependent memory effect, the simplified ones for DC and AC signal-based analyses and the equations of crucial parameters have been derived. Besides the well-known opposite relationships with frequency, the Lissajous patterns of memelement and inverse memelement also use the opposite relationships with the time. The proposed models can be well applied to the practical elements. Originality/value: To the best of the authors' knowledge, for the first time, the models' memelement and inverse memelement with time-dependent memory effect have been presented. A new contrast between these elements has been discovered. The resulting models are applicable to the practical elements. [ABSTRACT FROM AUTHOR] |
| Copyright of COMPEL is the property of Emerald Publishing Limited and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 173776150 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Generic analytical models of memelement and inverse memelement with time-dependent memory effects. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Banchuin%2C+Rawid%22">Banchuin, Rawid</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> rawid.ban@siam.edu</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22COMPEL%22">COMPEL</searchLink>. 2023, Vol. 42 Issue 6, p1669-1689. 21p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Memory%22">Memory</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Purpose: The purpose of this paper is to originally present the generic analytical models of memelement and inverse memelement with time-dependent memory effect. Design/methodology/approach: The variable order forward Grünwald–Letnikov fractional derivative and the memristor and inverse memristor models proposed by Fouda et al. have been adopted as the basis. Both analytical and numerical studies have been conducted. The applications to the candidate practical memristor and inverse memelements have also been presented. Findings: The generic analytical models of memelement and inverse memelement with time-dependent memory effect, the simplified ones for DC and AC signal-based analyses and the equations of crucial parameters have been derived. Besides the well-known opposite relationships with frequency, the Lissajous patterns of memelement and inverse memelement also use the opposite relationships with the time. The proposed models can be well applied to the practical elements. Originality/value: To the best of the authors' knowledge, for the first time, the models' memelement and inverse memelement with time-dependent memory effect have been presented. A new contrast between these elements has been discovered. The resulting models are applicable to the practical elements. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of COMPEL is the property of Emerald Publishing Limited and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=173776150 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1108/COMPEL-03-2023-0085 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 21 StartPage: 1669 Subjects: – SubjectFull: Memory Type: general Titles: – TitleFull: Generic analytical models of memelement and inverse memelement with time-dependent memory effects. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Banchuin, Rawid IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: 2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 03321649 Numbering: – Type: volume Value: 42 – Type: issue Value: 6 Titles: – TitleFull: COMPEL Type: main |
| ResultId | 1 |
