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Large‐area growth of monolayer MoS2 by using atmospheric‐pressure chemical vapor deposition with nucleation controlling process.

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Title: Large‐area growth of monolayer MoS2 by using atmospheric‐pressure chemical vapor deposition with nucleation controlling process.
Authors: Ding, Binbin1 (AUTHOR), Zhu, Changjun1 (AUTHOR), Wang, Tianming1 (AUTHOR), Li, Lianbi1 (AUTHOR) xpu_lilianbi@163.com, Li, Zebin1 (AUTHOR), Cheng, Lin1 (AUTHOR), Feng, Song1 (AUTHOR), Zhang, Guoqing1 (AUTHOR), Zang, Yuan2 (AUTHOR), Hu, Jichao2 (AUTHOR), Li, Lei1 (AUTHOR), Xia, Caijuan1 (AUTHOR)
Source: Surface & Interface Analysis: SIA. Jan2024, Vol. 56 Issue 1, p22-31. 10p.
Subjects: Monomolecular films, Chemical vapor deposition, Process optimization, Aluminum oxide, Epitaxy
Abstract: The epitaxial growth of high‐quality and large‐area monolayer (ML) MoS2 has attracted widespread attention in recent years. Here, MoS2 on Al2O3 substrate was prepared by using atmospheric‐pressure chemical vapor deposition. The process parameters such as temperature difference and distance between MoO3 and Al2O3, nucleation temperature, and heating rate were optimized. The high MoO3 evaporation temperature facilitates Mo vapor transport to grow ML‐MoS2. The introduction of nucleation temperature facilitates the deposition of MoS2, and the morphology of the nucleation point is related to the amount of MoO3‐x deposited on Al2O3. This process optimization method is also applicable to growth MoS2 on SiO2. The ML‐MoS2 with a size greater than 1 cm2 was successfully fabricated on Al2O3 and SiO2, which laid a foundation for the practical application of ML‐MoS2. [ABSTRACT FROM AUTHOR]
Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 174181410
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PubTypeId: academicJournal
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  Data: Large‐area growth of monolayer MoS<subscript>2</subscript> by using atmospheric‐pressure chemical vapor deposition with nucleation controlling process.
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  Data: <searchLink fieldCode="JN" term="%22Surface+%26+Interface+Analysis%3A+SIA%22">Surface & Interface Analysis: SIA</searchLink>. Jan2024, Vol. 56 Issue 1, p22-31. 10p.
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  Data: <searchLink fieldCode="DE" term="%22Monomolecular+films%22">Monomolecular films</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Process+optimization%22">Process optimization</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum+oxide%22">Aluminum oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: The epitaxial growth of high‐quality and large‐area monolayer (ML) MoS2 has attracted widespread attention in recent years. Here, MoS2 on Al2O3 substrate was prepared by using atmospheric‐pressure chemical vapor deposition. The process parameters such as temperature difference and distance between MoO3 and Al2O3, nucleation temperature, and heating rate were optimized. The high MoO3 evaporation temperature facilitates Mo vapor transport to grow ML‐MoS2. The introduction of nucleation temperature facilitates the deposition of MoS2, and the morphology of the nucleation point is related to the amount of MoO3‐x deposited on Al2O3. This process optimization method is also applicable to growth MoS2 on SiO2. The ML‐MoS2 with a size greater than 1 cm2 was successfully fabricated on Al2O3 and SiO2, which laid a foundation for the practical application of ML‐MoS2. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1002/sia.7264
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 22
    Subjects:
      – SubjectFull: Monomolecular films
        Type: general
      – SubjectFull: Chemical vapor deposition
        Type: general
      – SubjectFull: Process optimization
        Type: general
      – SubjectFull: Aluminum oxide
        Type: general
      – SubjectFull: Epitaxy
        Type: general
    Titles:
      – TitleFull: Large‐area growth of monolayer MoS2 by using atmospheric‐pressure chemical vapor deposition with nucleation controlling process.
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            – D: 01
              M: 01
              Text: Jan2024
              Type: published
              Y: 2024
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