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Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF4 reactive sputtering.

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Title: Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF4 reactive sputtering.
Authors: Fan, Ching-Lin1,2 (AUTHOR) clfan@mail.ntust.edu.tw, Hsin, Tzu-Chun1 (AUTHOR), Yu, Xiang-Wei1 (AUTHOR), Lin, Zhe-Chen1 (AUTHOR)
Source: Materials Science in Semiconductor Processing. Mar2024, Vol. 172, pN.PAG-N.PAG. 1p.
Subjects: Passivation, Reactive sputtering, Indium gallium zinc oxide, Metal bonding, Radiofrequency sputtering, Threshold voltage, Thin film transistors
Abstract: We propose a new fluorine doping scheme to achieve a notable improvement in IZTO thin-film-transistor reliability using the fluorine-doped IZTO channel with the stacked IZTO:F/IZTO layers. The fluorine in IZTO:F film was in-situ doped through IZTO deposition using RF sputtering with CF 4 as the reactive gas. Furthermore, the electrical characteristics of the IZTO TFTs with varied IZTO:F/IZTO layer thickness ratios were investigated to optimize the IZTO:F thickness ratio in the channel. The TFTs with the optimal IZTO:F/IZTO layer thickness demonstrated significantly enhanced reliability under various stress conditions because the doped fluorine can occupy oxygen vacancies and provide stronger bonding with the metal ions in the active layer. Specifically, the TFT threshold voltage shift (ΔV th) with and without IZTO:F layers were 2.72 V and 5.77 V under positive bias stress (PBS), respectively, which is 2.12 times reduction. The ΔV th was also decreased from −2.23 V to −0.30 V under negative bias stress (NBS), which shows an improvement of 7.43 times. In addition, these devices also have enhanced reliability under negative bias illumination stress (NBIS). The fluorinated IZTO TFTs with the IZTO:F/IZTO layer exhibits enhanced reliability as a result of the defects passivation in the doped fluorine but also have a low manufacturing cost due to in-situ fluorine doping with no additional doping step. It is believed that fluorinated IZTO TFT with the enhanced device reliability will be a good candidate to support the requirements for the next-generation display backplanes. [ABSTRACT FROM AUTHOR]
Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 174760417
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PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF4 reactive sputtering.
– Name: Author
  Label: Authors
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  Data: <searchLink fieldCode="AR" term="%22Fan%2C+Ching-Lin%22">Fan, Ching-Lin</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> clfan@mail.ntust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Hsin%2C+Tzu-Chun%22">Hsin, Tzu-Chun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yu%2C+Xiang-Wei%22">Yu, Xiang-Wei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lin%2C+Zhe-Chen%22">Lin, Zhe-Chen</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>. Mar2024, Vol. 172, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Passivation%22">Passivation</searchLink><br /><searchLink fieldCode="DE" term="%22Reactive+sputtering%22">Reactive sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+gallium+zinc+oxide%22">Indium gallium zinc oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+bonding%22">Metal bonding</searchLink><br /><searchLink fieldCode="DE" term="%22Radiofrequency+sputtering%22">Radiofrequency sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We propose a new fluorine doping scheme to achieve a notable improvement in IZTO thin-film-transistor reliability using the fluorine-doped IZTO channel with the stacked IZTO:F/IZTO layers. The fluorine in IZTO:F film was in-situ doped through IZTO deposition using RF sputtering with CF 4 as the reactive gas. Furthermore, the electrical characteristics of the IZTO TFTs with varied IZTO:F/IZTO layer thickness ratios were investigated to optimize the IZTO:F thickness ratio in the channel. The TFTs with the optimal IZTO:F/IZTO layer thickness demonstrated significantly enhanced reliability under various stress conditions because the doped fluorine can occupy oxygen vacancies and provide stronger bonding with the metal ions in the active layer. Specifically, the TFT threshold voltage shift (ΔV th) with and without IZTO:F layers were 2.72 V and 5.77 V under positive bias stress (PBS), respectively, which is 2.12 times reduction. The ΔV th was also decreased from −2.23 V to −0.30 V under negative bias stress (NBS), which shows an improvement of 7.43 times. In addition, these devices also have enhanced reliability under negative bias illumination stress (NBIS). The fluorinated IZTO TFTs with the IZTO:F/IZTO layer exhibits enhanced reliability as a result of the defects passivation in the doped fluorine but also have a low manufacturing cost due to in-situ fluorine doping with no additional doping step. It is believed that fluorinated IZTO TFT with the enhanced device reliability will be a good candidate to support the requirements for the next-generation display backplanes. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.mssp.2023.108068
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Passivation
        Type: general
      – SubjectFull: Reactive sputtering
        Type: general
      – SubjectFull: Indium gallium zinc oxide
        Type: general
      – SubjectFull: Metal bonding
        Type: general
      – SubjectFull: Radiofrequency sputtering
        Type: general
      – SubjectFull: Threshold voltage
        Type: general
      – SubjectFull: Thin film transistors
        Type: general
    Titles:
      – TitleFull: Indium-zinc-tin-oxide thin-film-transistor reliability enhancement using fluoridation with CF4 reactive sputtering.
        Type: main
  BibRelationships:
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      – PersonEntity:
          Name:
            NameFull: Fan, Ching-Lin
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            NameFull: Hsin, Tzu-Chun
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            NameFull: Yu, Xiang-Wei
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            NameFull: Lin, Zhe-Chen
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            – D: 15
              M: 03
              Text: Mar2024
              Type: published
              Y: 2024
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              Value: 172
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            – TitleFull: Materials Science in Semiconductor Processing
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