Impedance spectroscopy study of Al/p-Cu2ZnSnS4 thin films Schottky diode grown by a two-stage method.
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| Title: | Impedance spectroscopy study of Al/p-Cu |
|---|---|
| Authors: | Sebai, Marwa1 (AUTHOR) sebai.marwa11@gmail.com, Hannachi, Asma1 (AUTHOR), Jaffrezic-Renault, Nicole2 (AUTHOR), Kanzari, Mounir1,3 (AUTHOR) |
| Source: | Applied Physics A: Materials Science & Processing. Jan2024, Vol. 130 Issue 1, p1-12. 12p. |
| Subjects: | Schottky barrier diodes, Parallel electric circuits, Band gaps, RC circuits, Raman spectroscopy, Impedance spectroscopy |
| Abstract: | In this paper, we report the electrical properties of Al/p-Cu2ZnSnS4 thin film Schottky diode fabricated by a two-step method. Cu2ZnSnS4 ingot was successfully grown by direct melting of the constituent elements, then (CZTS) thin film was grown using thermal evaporation method onto heated Mo substrate temperature at 100 °C. After that, the as-deposited CZTS sample were annealed in a sulfur atmosphere at 400 °C for 30 min. X-ray diffraction analysis reveals a polycrystalline CZTS preferentially oriented along a (112) plane in kesterite structure. For bulk material, the band gap energy is about 1.39 eV, the complex impedance plots display a semicircle with an equivalent circuit consisting of a parallel RC circuit connected to a series resistor. The CZTS thin film was investigated in the way of structural and electrical properties. Raman spectra ensured formation of kesterite CZTS phase. Dense and polycrystalline surface features were observed in SEM images of CZTS thin film. The I–V characteristics showed that a Schottky contact was obtained between Aluminum and p-Cu2ZnSnS4 absorber layer. Characteristic parameters such as saturation current, ideality factor and series resistance were calculated from the experimental I–V data. These parameters showed significant electrical properties such as low series resistance and an ideality factor between 1 and 2. Finally, the Arrhenius diagram provided a very low activation energy of about 2.03 meV. [ABSTRACT FROM AUTHOR] |
| Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Items | – Name: Title Label: Title Group: Ti Data: Impedance spectroscopy study of Al/p-Cu<subscript>2</subscript>ZnSnS<subscript>4</subscript> thin films Schottky diode grown by a two-stage method. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Sebai%2C+Marwa%22">Sebai, Marwa</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> sebai.marwa11@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Hannachi%2C+Asma%22">Hannachi, Asma</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jaffrezic-Renault%2C+Nicole%22">Jaffrezic-Renault, Nicole</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kanzari%2C+Mounir%22">Kanzari, Mounir</searchLink><relatesTo>1,3</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. Jan2024, Vol. 130 Issue 1, p1-12. 12p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Schottky+barrier+diodes%22">Schottky barrier diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Parallel+electric+circuits%22">Parallel electric circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22RC+circuits%22">RC circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Impedance+spectroscopy%22">Impedance spectroscopy</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this paper, we report the electrical properties of Al/p-Cu2ZnSnS4 thin film Schottky diode fabricated by a two-step method. Cu2ZnSnS4 ingot was successfully grown by direct melting of the constituent elements, then (CZTS) thin film was grown using thermal evaporation method onto heated Mo substrate temperature at 100 °C. After that, the as-deposited CZTS sample were annealed in a sulfur atmosphere at 400 °C for 30 min. X-ray diffraction analysis reveals a polycrystalline CZTS preferentially oriented along a (112) plane in kesterite structure. For bulk material, the band gap energy is about 1.39 eV, the complex impedance plots display a semicircle with an equivalent circuit consisting of a parallel RC circuit connected to a series resistor. The CZTS thin film was investigated in the way of structural and electrical properties. Raman spectra ensured formation of kesterite CZTS phase. Dense and polycrystalline surface features were observed in SEM images of CZTS thin film. The I–V characteristics showed that a Schottky contact was obtained between Aluminum and p-Cu2ZnSnS4 absorber layer. Characteristic parameters such as saturation current, ideality factor and series resistance were calculated from the experimental I–V data. These parameters showed significant electrical properties such as low series resistance and an ideality factor between 1 and 2. Finally, the Arrhenius diagram provided a very low activation energy of about 2.03 meV. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s00339-023-07195-8 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 1 Subjects: – SubjectFull: Schottky barrier diodes Type: general – SubjectFull: Parallel electric circuits Type: general – SubjectFull: Band gaps Type: general – SubjectFull: RC circuits Type: general – SubjectFull: Raman spectroscopy Type: general – SubjectFull: Impedance spectroscopy Type: general Titles: – TitleFull: Impedance spectroscopy study of Al/p-Cu2ZnSnS4 thin films Schottky diode grown by a two-stage method. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Sebai, Marwa – PersonEntity: Name: NameFull: Hannachi, Asma – PersonEntity: Name: NameFull: Jaffrezic-Renault, Nicole – PersonEntity: Name: NameFull: Kanzari, Mounir IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: Jan2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 09478396 Numbering: – Type: volume Value: 130 – Type: issue Value: 1 Titles: – TitleFull: Applied Physics A: Materials Science & Processing Type: main |
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