Synthesis and study of photoelectrochromic and photocatalytic behavior of double-layer N-doped TiO2/Co3O4 configuration via DC reactive magnetron sputtering.

Saved in:
Bibliographic Details
Title: Synthesis and study of photoelectrochromic and photocatalytic behavior of double-layer N-doped TiO2/Co3O4 configuration via DC reactive magnetron sputtering.
Authors: Kadhim, Firas J.1 (AUTHOR) dr.firas1990@yahoo.com, Hashim, Noor Alhuda H.1 (AUTHOR), Abdulsattar, Zinah S.1 (AUTHOR)
Source: Optical & Quantum Electronics. Feb2024, Vol. 56 Issue 2, p1-10. 10p.
Subjects: Reactive sputtering, Magnetron sputtering, Doping agents (Chemistry), Zinc oxide films, Field emission electron microscopy, Optical modulation, Thin films
Abstract: This work introduces the synthesis and the characterization of N-doped TiO2 and Co3O4 thin films prepared via DC reactive magnetron sputtering technique. N-doped TiO2 thin films was deposited on indium-tin oxide (ITO) conducting substrate at different nitrogen ratios, then the Co3O4 thin film was deposited onto the N-doped TiO2 layer to synthesize a double-layer TiO2-N/Co3O4 Photoelectrochromic device. Several techniques were used to characterize the produces which are x-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), Fourier-transform infrared (FTIR) spectroscopy and UV–Vis spectroscopy. The Photoelectrochromic device was characterized by UV–Vis spectroscopy and the results show that the double-layer N-doped TiO2 /Co3O4 was sensitive to light, that's due to the photogenerated holes in the valence band of photocatalyst (N-doped TiO2) and led to direct electron transfer from Co3O4 to N-doped TiO2 layer.The optical transmittance modulation Δ T = T b - T c was 27.1% after 2.5 h irradiation by xenon light. [ABSTRACT FROM AUTHOR]
Copyright of Optical & Quantum Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
Description
Abstract:This work introduces the synthesis and the characterization of N-doped TiO2 and Co3O4 thin films prepared via DC reactive magnetron sputtering technique. N-doped TiO2 thin films was deposited on indium-tin oxide (ITO) conducting substrate at different nitrogen ratios, then the Co3O4 thin film was deposited onto the N-doped TiO2 layer to synthesize a double-layer TiO2-N/Co3O4 Photoelectrochromic device. Several techniques were used to characterize the produces which are x-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), Fourier-transform infrared (FTIR) spectroscopy and UV–Vis spectroscopy. The Photoelectrochromic device was characterized by UV–Vis spectroscopy and the results show that the double-layer N-doped TiO2 /Co3O4 was sensitive to light, that's due to the photogenerated holes in the valence band of photocatalyst (N-doped TiO2) and led to direct electron transfer from Co3O4 to N-doped TiO2 layer.The optical transmittance modulation Δ T = T b - T c was 27.1% after 2.5 h irradiation by xenon light. [ABSTRACT FROM AUTHOR]
ISSN:03068919
DOI:10.1007/s11082-023-05696-7