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A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications.

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Title: A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications.
Authors: Ahn, Hyunjin1 (AUTHOR) hjahn@pusan.ac.kr, Oh, Kyutaek2 (AUTHOR) ktoh95@pusan.ac.kr, Choi, Se-Eun3 (AUTHOR), Son, Dong-Hee4 (AUTHOR) dhson@hanwha.com, Nam, Ilku2 (AUTHOR) nik@pusan.ac.kr, Lim, Kyoohyun5 (AUTHOR) khlim@point2tech.com, Lee, Ockgoo2 (AUTHOR) olee@pusna.ac.kr
Source: Nanomaterials (2079-4991). Feb2024, Vol. 14 Issue 3, p262. 13p.
Subjects: CMOS amplifiers, Intermodulation distortion, Quadrature phase shift keying, Power amplifiers
Abstract: The narrowband Internet-of-Things (NB-IoT) has been developed to provide low-power, wide-area IoT applications. The efficiency of a power amplifier (PA) in a transmitter is crucial for a longer battery lifetime, satisfying the requirements for output power and linearity. In addition, the design of an internal complementary metal-oxide semiconductor (CMOS) PA is typically required when considering commercial applications to include the operation of an optional external PA. This paper presents a dual-mode CMOS PA with an external PA driver for NB-IoT applications. The proposed PA supports an external PA mode without degrading the performances of output power, linearity, and stability. In the operation of an external PA mode, the PA provides a sufficient gain to drive an external PA. A parallel-combined transistor method is adopted for a dual-mode operation and a third-order intermodulation distortion (IMD3) cancellation. The proposed CMOS PA with an external PA driver was implemented using 40 nm-CMOS technology. The PA achieves a gain of 20.4 dB, a saturated output power of 28.8 dBm, and a power-added efficiency (PAE) of 57.8% in high-power (HP) mode at 920 MHz. With an NB-IoT signal (200 kHz π/4-differential quadrature phase shift keying (DQPSK)), the proposed PA achieves 24.2 dBm output power (Pout) with a 31.0% PAE, while satisfying −45 dBc adjacent channel leakage ratio (ACLR). More than 80% of the current consumption at 12 dBm Pout could be saved compared to that in HP mode when the proposed PA operates in low-power (LP) mode. The implemented dual-mode CMOS PA provides high linear output power with high efficiency, while supporting an external PA mode. The proposed PA is a good candidate for NB-IoT applications. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications.
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  Data: <searchLink fieldCode="AR" term="%22Ahn%2C+Hyunjin%22">Ahn, Hyunjin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> hjahn@pusan.ac.kr</i><br /><searchLink fieldCode="AR" term="%22Oh%2C+Kyutaek%22">Oh, Kyutaek</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> ktoh95@pusan.ac.kr</i><br /><searchLink fieldCode="AR" term="%22Choi%2C+Se-Eun%22">Choi, Se-Eun</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Son%2C+Dong-Hee%22">Son, Dong-Hee</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> dhson@hanwha.com</i><br /><searchLink fieldCode="AR" term="%22Nam%2C+Ilku%22">Nam, Ilku</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> nik@pusan.ac.kr</i><br /><searchLink fieldCode="AR" term="%22Lim%2C+Kyoohyun%22">Lim, Kyoohyun</searchLink><relatesTo>5</relatesTo> (AUTHOR)<i> khlim@point2tech.com</i><br /><searchLink fieldCode="AR" term="%22Lee%2C+Ockgoo%22">Lee, Ockgoo</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> olee@pusna.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Feb2024, Vol. 14 Issue 3, p262. 13p.
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– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The narrowband Internet-of-Things (NB-IoT) has been developed to provide low-power, wide-area IoT applications. The efficiency of a power amplifier (PA) in a transmitter is crucial for a longer battery lifetime, satisfying the requirements for output power and linearity. In addition, the design of an internal complementary metal-oxide semiconductor (CMOS) PA is typically required when considering commercial applications to include the operation of an optional external PA. This paper presents a dual-mode CMOS PA with an external PA driver for NB-IoT applications. The proposed PA supports an external PA mode without degrading the performances of output power, linearity, and stability. In the operation of an external PA mode, the PA provides a sufficient gain to drive an external PA. A parallel-combined transistor method is adopted for a dual-mode operation and a third-order intermodulation distortion (IMD3) cancellation. The proposed CMOS PA with an external PA driver was implemented using 40 nm-CMOS technology. The PA achieves a gain of 20.4 dB, a saturated output power of 28.8 dBm, and a power-added efficiency (PAE) of 57.8% in high-power (HP) mode at 920 MHz. With an NB-IoT signal (200 kHz π/4-differential quadrature phase shift keying (DQPSK)), the proposed PA achieves 24.2 dBm output power (Pout) with a 31.0% PAE, while satisfying −45 dBc adjacent channel leakage ratio (ACLR). More than 80% of the current consumption at 12 dBm Pout could be saved compared to that in HP mode when the proposed PA operates in low-power (LP) mode. The implemented dual-mode CMOS PA provides high linear output power with high efficiency, while supporting an external PA mode. The proposed PA is a good candidate for NB-IoT applications. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano14030262
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 13
        StartPage: 262
    Subjects:
      – SubjectFull: CMOS amplifiers
        Type: general
      – SubjectFull: Intermodulation distortion
        Type: general
      – SubjectFull: Quadrature phase shift keying
        Type: general
      – SubjectFull: Power amplifiers
        Type: general
    Titles:
      – TitleFull: A Dual-Mode CMOS Power Amplifier with an External Power Amplifier Driver Using 40 nm CMOS for Narrowband Internet-of-Things Applications.
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            NameFull: Ahn, Hyunjin
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            NameFull: Oh, Kyutaek
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            NameFull: Choi, Se-Eun
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            – D: 01
              M: 02
              Text: Feb2024
              Type: published
              Y: 2024
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            – TitleFull: Nanomaterials (2079-4991)
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