Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures.
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| Title: | Quantization of Electrical Conductance in Layered Zr/ZrO |
|---|---|
| Authors: | Vokhmintsev, A. S.1 (AUTHOR), Petrenyov, I. A.1 (AUTHOR), Kamalov, R. V.1 (AUTHOR), Karabanalov, M. S.1 (AUTHOR), Weinstein, I. A.1,2 (AUTHOR) i.a.weinstein@urfu.ru, Rempel, A. A.1,2 (AUTHOR) |
| Source: | Doklady Physical Chemistry. Nov2023, Vol. 513 Issue 1, p176-180. 5p. |
| Subjects: | Parallel electric circuits, Current-voltage characteristics, Electric circuits, Nanotubes |
| Abstract: | Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current–voltage characteristics in the region of low conductance of the fabricated Zr/ZrO2/Au memristive structures were studied in this work. For the first time, an analysis was made of the reversible mechanisms of formation and destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in the nanotubular dioxide layer. An equivalent electrical circuit of a parallel resistor connection was proposed and discussed to describe the observed memristive behavior of the studied layered structures. [ABSTRACT FROM AUTHOR] |
| Copyright of Doklady Physical Chemistry is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 175719572 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Quantization of Electrical Conductance in Layered Zr/ZrO<subscript>2</subscript>/Au Memristive Structures. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Vokhmintsev%2C+A%2E+S%2E%22">Vokhmintsev, A. S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Petrenyov%2C+I%2E+A%2E%22">Petrenyov, I. A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kamalov%2C+R%2E+V%2E%22">Kamalov, R. V.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Karabanalov%2C+M%2E+S%2E%22">Karabanalov, M. S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Weinstein%2C+I%2E+A%2E%22">Weinstein, I. A.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> i.a.weinstein@urfu.ru</i><br /><searchLink fieldCode="AR" term="%22Rempel%2C+A%2E+A%2E%22">Rempel, A. A.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Doklady+Physical+Chemistry%22">Doklady Physical Chemistry</searchLink>. Nov2023, Vol. 513 Issue 1, p176-180. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Parallel+electric+circuits%22">Parallel electric circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Current-voltage+characteristics%22">Current-voltage characteristics</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+circuits%22">Electric circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Nanotubes%22">Nanotubes</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current–voltage characteristics in the region of low conductance of the fabricated Zr/ZrO2/Au memristive structures were studied in this work. For the first time, an analysis was made of the reversible mechanisms of formation and destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in the nanotubular dioxide layer. An equivalent electrical circuit of a parallel resistor connection was proposed and discussed to describe the observed memristive behavior of the studied layered structures. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Doklady Physical Chemistry is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S0012501623600262 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 176 Subjects: – SubjectFull: Parallel electric circuits Type: general – SubjectFull: Current-voltage characteristics Type: general – SubjectFull: Electric circuits Type: general – SubjectFull: Nanotubes Type: general Titles: – TitleFull: Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Vokhmintsev, A. S. – PersonEntity: Name: NameFull: Petrenyov, I. A. – PersonEntity: Name: NameFull: Kamalov, R. V. – PersonEntity: Name: NameFull: Karabanalov, M. S. – PersonEntity: Name: NameFull: Weinstein, I. A. – PersonEntity: Name: NameFull: Rempel, A. A. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: Nov2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 00125016 Numbering: – Type: volume Value: 513 – Type: issue Value: 1 Titles: – TitleFull: Doklady Physical Chemistry Type: main |
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