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Gettering Effect in Cr/4H–SiC UV Photodetectors under Ptoton Irradiation with E = 15 MeV.

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Title: Gettering Effect in Cr/4H–SiC UV Photodetectors under Ptoton Irradiation with E = 15 MeV.
Authors: Nikitina, I. P.1 (AUTHOR) irina.nikitina45@gmail.com, Kalinina, E. V.1 (AUTHOR), Zabrodski, V. V.1 (AUTHOR)
Source: Technical Physics. Dec2023, Vol. 68 Issue 12, p683-688. 6p.
Subjects: Gettering, Photodetectors, Irradiation, Detectors, Protons, Radiation
Abstract: The mechanism of structure transformation in Cr/4H–SiC UV photo detectors, which is responsi-ble for the cyclic gettering of radiation defects, under repeated proton irradiation, is proposed in this work. [ABSTRACT FROM AUTHOR]
Copyright of Technical Physics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Gettering Effect in Cr/4H–SiC UV Photodetectors under Ptoton Irradiation with E = 15 MeV.
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  Data: <searchLink fieldCode="JN" term="%22Technical+Physics%22">Technical Physics</searchLink>. Dec2023, Vol. 68 Issue 12, p683-688. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Gettering%22">Gettering</searchLink><br /><searchLink fieldCode="DE" term="%22Photodetectors%22">Photodetectors</searchLink><br /><searchLink fieldCode="DE" term="%22Irradiation%22">Irradiation</searchLink><br /><searchLink fieldCode="DE" term="%22Detectors%22">Detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Protons%22">Protons</searchLink><br /><searchLink fieldCode="DE" term="%22Radiation%22">Radiation</searchLink>
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  Data: The mechanism of structure transformation in Cr/4H–SiC UV photo detectors, which is responsi-ble for the cyclic gettering of radiation defects, under repeated proton irradiation, is proposed in this work. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Technical Physics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1134/S1063784223080224
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        Text: English
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      – SubjectFull: Gettering
        Type: general
      – SubjectFull: Photodetectors
        Type: general
      – SubjectFull: Irradiation
        Type: general
      – SubjectFull: Detectors
        Type: general
      – SubjectFull: Protons
        Type: general
      – SubjectFull: Radiation
        Type: general
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      – TitleFull: Gettering Effect in Cr/4H–SiC UV Photodetectors under Ptoton Irradiation with E = 15 MeV.
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              Text: Dec2023
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