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Formation and characterisation of MoSe2 for Cu(In,Ga)Se2 based solar cells

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Title: Formation and characterisation of MoSe2 for Cu(In,Ga)Se2 based solar cells
Authors: Abou-Ras, D.1,2 daniel.abou-ras@phys.ethz.ch, Kostorz, G.1, Bremaud, D.2, Kälin, M.2, Kurdesau, F.V.2, Tiwari, A.N.2, Döbeli, M.3
Source: Thin Solid Films. Jun2005, Vol. 480-481, p433-438. 6p.
Subjects: Solar cells, Selenium films, Backscattering, Layer structure (Solids)
Abstract: Abstract: The reaction kinetics of the MoSe2 formation have been investigated by selenizing Mo layers in Se vapor at different temperatures and for different durations. The samples were characterized by means of Rutherford backscattering spectrometry, X-ray diffraction (XRD), electron diffraction, and by bright-field and high-resolution transmission electron microscopy. It was found that in all samples, a homogeneous MoSe2 layer is formed on top of the Mo layer. The temperature dependence shows that the MoSe2 layer thickness increases strongly for temperatures higher than ca. 550 °C. At a substrate temperature of 450 °C, no difference in the MoSe2 thickness was detected for samples selenized for different durations. The diffusion constant of Se in MoSe2 is estimated from the selenization duration dependence of MoSe2 layer thicknesses at 580 °C. Finally, Cu(In,Ga)Se2 (CIGS) solar cells in substrate configuration were developed on indium tin oxide (ITO) transparent back contacts. An intentionally grown MoSe2 intermediate layer on ITO, prior to CIGS deposition, causes a significant efficiency improvement, suggesting that MoSe2 can facilitate a quasi-ohmic contact. Solar cell efficiencies of up to 11.8% are obtained using an ITO/MoSe2 back contact. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 17680175
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Formation and characterisation of MoSe<subscript>2</subscript> for Cu(In,Ga)Se<subscript>2</subscript> based solar cells
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  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Jun2005, Vol. 480-481, p433-438. 6p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Selenium+films%22">Selenium films</searchLink><br /><searchLink fieldCode="DE" term="%22Backscattering%22">Backscattering</searchLink><br /><searchLink fieldCode="DE" term="%22Layer+structure+%28Solids%29%22">Layer structure (Solids)</searchLink>
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  Label: Abstract
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  Data: Abstract: The reaction kinetics of the MoSe2 formation have been investigated by selenizing Mo layers in Se vapor at different temperatures and for different durations. The samples were characterized by means of Rutherford backscattering spectrometry, X-ray diffraction (XRD), electron diffraction, and by bright-field and high-resolution transmission electron microscopy. It was found that in all samples, a homogeneous MoSe2 layer is formed on top of the Mo layer. The temperature dependence shows that the MoSe2 layer thickness increases strongly for temperatures higher than ca. 550 °C. At a substrate temperature of 450 °C, no difference in the MoSe2 thickness was detected for samples selenized for different durations. The diffusion constant of Se in MoSe2 is estimated from the selenization duration dependence of MoSe2 layer thicknesses at 580 °C. Finally, Cu(In,Ga)Se2 (CIGS) solar cells in substrate configuration were developed on indium tin oxide (ITO) transparent back contacts. An intentionally grown MoSe2 intermediate layer on ITO, prior to CIGS deposition, causes a significant efficiency improvement, suggesting that MoSe2 can facilitate a quasi-ohmic contact. Solar cell efficiencies of up to 11.8% are obtained using an ITO/MoSe2 back contact. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.tsf.2004.11.098
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        Text: English
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        PageCount: 6
        StartPage: 433
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      – SubjectFull: Solar cells
        Type: general
      – SubjectFull: Selenium films
        Type: general
      – SubjectFull: Backscattering
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      – SubjectFull: Layer structure (Solids)
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              Text: Jun2005
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