Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS 2 Layers by Plasma-Assisted Molecular Beam Epitaxy.
Saved in:
| Title: | Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS 2 Layers by Plasma-Assisted Molecular Beam Epitaxy. |
|---|---|
| Authors: | Susanto, Iwan1,2 (AUTHOR) iwan.susanto@mesin.pnj.ac.id, Liu, Hong-Shan1 (AUTHOR), Ho, Yen-Ten3 (AUTHOR) chia500@yahoo.com.tw, Yu, Ing-Song1 (AUTHOR) isyu@gms.ndhu.edu.tw |
| Source: | Nanomaterials (2079-4991). Apr2024, Vol. 14 Issue 8, p732. 15p. |
| Subjects: | Molecular beam epitaxy, Epitaxy, Gallium nitride, Chemical vapor deposition, Frequency spectra, Crystal structure |
| Abstract: | The van der Waals epitaxy of wafer-scale GaN on 2D MoS2 and the integration of GaN/MoS2 heterostructures were investigated in this report. GaN films have been successfully grown on 2D MoS2 layers using three different Ga fluxes via a plasma-assisted molecular beam epitaxy (PA-MBE) system. The substrate for the growth was a few-layer 2D MoS2 deposited on sapphire using chemical vapor deposition (CVD). Three different Ga fluxes were provided by the gallium source of the K-cell at temperatures of 825, 875, and 925 °C, respectively. After the growth, RHEED, HR-XRD, and TEM were conducted to study the crystal structure of GaN films. The surface morphology was obtained using FE-SEM and AFM. Chemical composition was confirmed by XPS and EDS. Raman and PL spectra were carried out to investigate the optical properties of GaN films. According to the characterizations of GaN films, the van der Waals epitaxial growth mechanism of GaN films changed from 3D to 2D with the increase in Ga flux, provided by higher temperatures of the K-cell. GaN films grown at 750 °C for 3 h with a K-cell temperature of 925 °C demonstrated the greatest crystal quality, chemical composition, and optical properties. The heterostructure of 3D GaN on 2D MoS2 was integrated successfully using the low-temperature PA-MBE technique, which could be applied to novel electronics and optoelectronics. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| FullText | Links: – Type: pdflink Text: Availability: 1 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 176907580 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS 2 Layers by Plasma-Assisted Molecular Beam Epitaxy. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Susanto%2C+Iwan%22">Susanto, Iwan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> iwan.susanto@mesin.pnj.ac.id</i><br /><searchLink fieldCode="AR" term="%22Liu%2C+Hong-Shan%22">Liu, Hong-Shan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ho%2C+Yen-Ten%22">Ho, Yen-Ten</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> chia500@yahoo.com.tw</i><br /><searchLink fieldCode="AR" term="%22Yu%2C+Ing-Song%22">Yu, Ing-Song</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> isyu@gms.ndhu.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Apr2024, Vol. 14 Issue 8, p732. 15p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+nitride%22">Gallium nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Frequency+spectra%22">Frequency spectra</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+structure%22">Crystal structure</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The van der Waals epitaxy of wafer-scale GaN on 2D MoS2 and the integration of GaN/MoS2 heterostructures were investigated in this report. GaN films have been successfully grown on 2D MoS2 layers using three different Ga fluxes via a plasma-assisted molecular beam epitaxy (PA-MBE) system. The substrate for the growth was a few-layer 2D MoS2 deposited on sapphire using chemical vapor deposition (CVD). Three different Ga fluxes were provided by the gallium source of the K-cell at temperatures of 825, 875, and 925 °C, respectively. After the growth, RHEED, HR-XRD, and TEM were conducted to study the crystal structure of GaN films. The surface morphology was obtained using FE-SEM and AFM. Chemical composition was confirmed by XPS and EDS. Raman and PL spectra were carried out to investigate the optical properties of GaN films. According to the characterizations of GaN films, the van der Waals epitaxial growth mechanism of GaN films changed from 3D to 2D with the increase in Ga flux, provided by higher temperatures of the K-cell. GaN films grown at 750 °C for 3 h with a K-cell temperature of 925 °C demonstrated the greatest crystal quality, chemical composition, and optical properties. The heterostructure of 3D GaN on 2D MoS2 was integrated successfully using the low-temperature PA-MBE technique, which could be applied to novel electronics and optoelectronics. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=176907580 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano14080732 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 15 StartPage: 732 Subjects: – SubjectFull: Molecular beam epitaxy Type: general – SubjectFull: Epitaxy Type: general – SubjectFull: Gallium nitride Type: general – SubjectFull: Chemical vapor deposition Type: general – SubjectFull: Frequency spectra Type: general – SubjectFull: Crystal structure Type: general Titles: – TitleFull: Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS 2 Layers by Plasma-Assisted Molecular Beam Epitaxy. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Susanto, Iwan – PersonEntity: Name: NameFull: Liu, Hong-Shan – PersonEntity: Name: NameFull: Ho, Yen-Ten – PersonEntity: Name: NameFull: Yu, Ing-Song IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 04 Text: Apr2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 14 – Type: issue Value: 8 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
| ResultId | 1 |
