Preparation and characteristics of the O3+-ion-implanted and femtosecond laser-ablated waveguide in the high-gain Nd3+-doped laser glass.
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| Title: | Preparation and characteristics of the O3+-ion-implanted and femtosecond laser-ablated waveguide in the high-gain Nd3+-doped laser glass. |
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| Authors: | Liu, Chun-Xiao1 (AUTHOR) chunxiaoliu@njupt.edu.cn, Wang, Zi-Hao1 (AUTHOR), Sun, Wang1 (AUTHOR), Zhao, Jie1 (AUTHOR), Bao, Xiao-Yu1 (AUTHOR) |
| Source: | Journal of Materials Science: Materials in Electronics. May2024, Vol. 35 Issue 13, p1-7. 7p. |
| Abstract: | In the work, the planar and ridge waveguides are fabricated by the combination of ion implantation and femtosecond laser ablation in the high-gain Nd3+-doped laser glass. The species, energy, and dose of ion implantation are O3+ ion, 6.0 × 106 eV, and 5.0 × 1014 ions/cm2, respectively. The pulse energy and the scanning velocity are 3 μJ and 50 μm/s for the FS laser ablation. The m-line curve and the refractive index distribution of the planar waveguide are got via a prism coupler and a reflection calculation method, respectively. The refractive index in waveguide core is increased by 2.3 × 10–3 through the O3+ ion irradiation. The microscope images and near-field intensity distributions for both planar and ridge waveguides are measured by a Nikon microscope and an end-face coupling arrangement, respectively. The cross-sectional dimension of the ridge waveguide is 4.2 μm × 10 μm. It has the potential to explore new dimensions in the field of the active waveguides. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 177097879 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Preparation and characteristics of the O<superscript>3+</superscript>-ion-implanted and femtosecond laser-ablated waveguide in the high-gain Nd<superscript>3+</superscript>-doped laser glass. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Liu%2C+Chun-Xiao%22">Liu, Chun-Xiao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> chunxiaoliu@njupt.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Wang%2C+Zi-Hao%22">Wang, Zi-Hao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sun%2C+Wang%22">Sun, Wang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhao%2C+Jie%22">Zhao, Jie</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bao%2C+Xiao-Yu%22">Bao, Xiao-Yu</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. May2024, Vol. 35 Issue 13, p1-7. 7p. – Name: Abstract Label: Abstract Group: Ab Data: In the work, the planar and ridge waveguides are fabricated by the combination of ion implantation and femtosecond laser ablation in the high-gain Nd3+-doped laser glass. The species, energy, and dose of ion implantation are O3+ ion, 6.0 × 106 eV, and 5.0 × 1014 ions/cm2, respectively. The pulse energy and the scanning velocity are 3 μJ and 50 μm/s for the FS laser ablation. The m-line curve and the refractive index distribution of the planar waveguide are got via a prism coupler and a reflection calculation method, respectively. The refractive index in waveguide core is increased by 2.3 × 10–3 through the O3+ ion irradiation. The microscope images and near-field intensity distributions for both planar and ridge waveguides are measured by a Nikon microscope and an end-face coupling arrangement, respectively. The cross-sectional dimension of the ridge waveguide is 4.2 μm × 10 μm. It has the potential to explore new dimensions in the field of the active waveguides. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-024-12686-2 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 1 Titles: – TitleFull: Preparation and characteristics of the O3+-ion-implanted and femtosecond laser-ablated waveguide in the high-gain Nd3+-doped laser glass. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Liu, Chun-Xiao – PersonEntity: Name: NameFull: Wang, Zi-Hao – PersonEntity: Name: NameFull: Sun, Wang – PersonEntity: Name: NameFull: Zhao, Jie – PersonEntity: Name: NameFull: Bao, Xiao-Yu IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 35 – Type: issue Value: 13 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
| ResultId | 1 |