Sifawa, A. A., Mohammad, S. M., Muhammad, A., Lim, W. F., Abdullah, M., Rajamanickam, S., & Abed, S. M. (2024). Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient. Journal of Materials Science: Materials in Electronics, 35(14), 1. https://doi.org/10.1007/s10854-024-12717-y
Chicago Style (17th ed.) CitationSifawa, Abubakar A., Sabah M. Mohammad, A. Muhammad, Way Foong Lim, Mundzir Abdullah, Suvindraj Rajamanickam, and Shireen Mohammed Abed. "Influence of Power and Duration on RF Sputtering for the Formation of Terbium Oxide Passivation Layers via the Argon Ambient." Journal of Materials Science: Materials in Electronics 35, no. 14 (2024): 1. https://doi.org/10.1007/s10854-024-12717-y.
MLA (9th ed.) CitationSifawa, Abubakar A., et al. "Influence of Power and Duration on RF Sputtering for the Formation of Terbium Oxide Passivation Layers via the Argon Ambient." Journal of Materials Science: Materials in Electronics, vol. 35, no. 14, 2024, p. 1, https://doi.org/10.1007/s10854-024-12717-y.