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Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient.

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Title: Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient.
Authors: Sifawa, Abubakar A.1,2 (AUTHOR) aasifawa13@gmail.com, Mohammad, Sabah M.1 (AUTHOR) sabah@usm.my, Muhammad, A.3 (AUTHOR), Lim, Way Foong1 (AUTHOR), Abdullah, Mundzir1 (AUTHOR), Rajamanickam, Suvindraj1 (AUTHOR), Abed, Shireen Mohammed1,4 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. May2024, Vol. 35 Issue 14, p1-18. 18p.
Subjects: Terbium, Radiofrequency sputtering, Passivation, Field emission electron microscopy, Atomic force microscopy, Surface roughness
Abstract: In this study, we have successfully used radio-frequency (RF) sputtering to sputter the Tb4O7 passivation layers on silicon (Si) substrates. The impact of different RF powers and durations on structural, morphological, compositional, and optical characteristics was investigated via different characterization systems. The grazing incidence X-ray diffraction (GIXRD) analysis has verified the formation of all the studied samples (A, B, C, and D) sputtered at A (80 W/30 min and then raised to 100 W/15 min), B (80 W/30 min and then raised to 100 W/35 min), C (80 W/30 min and then raised to 100 W/55 min), and D (100 W/45 min), respectively. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were used to analyze the surface morphology of the investigated samples. Sample (C) exhibited larger grain sizes and higher surface roughness of 2.33 nm. The band gap energy (ED) values were evaluated by applying the Kubelka–Munk (KM) approach for all the studied samples, and the obtained values were within a range between 2.29 and 2.53 eV. Previous research has shown that the Tb4O7 thin film sputtered on a Si substrate for 45 min using the RF power (110 W) and annealed for 900 °C in argon (Ar) ambient resulted in the formation of crystalline Tb4O7 phase without clear explanation. This motivated us to conduct this study to observe the influence of different RF power and durations as well as determine the best RF power for the formation of the best Tb4O7 passivation layer. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient.
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  Data: <searchLink fieldCode="AR" term="%22Sifawa%2C+Abubakar+A%2E%22">Sifawa, Abubakar A.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> aasifawa13@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Mohammad%2C+Sabah+M%2E%22">Mohammad, Sabah M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> sabah@usm.my</i><br /><searchLink fieldCode="AR" term="%22Muhammad%2C+A%2E%22">Muhammad, A.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lim%2C+Way+Foong%22">Lim, Way Foong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Abdullah%2C+Mundzir%22">Abdullah, Mundzir</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Rajamanickam%2C+Suvindraj%22">Rajamanickam, Suvindraj</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Abed%2C+Shireen+Mohammed%22">Abed, Shireen Mohammed</searchLink><relatesTo>1,4</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. May2024, Vol. 35 Issue 14, p1-18. 18p.
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  Data: <searchLink fieldCode="DE" term="%22Terbium%22">Terbium</searchLink><br /><searchLink fieldCode="DE" term="%22Radiofrequency+sputtering%22">Radiofrequency sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Passivation%22">Passivation</searchLink><br /><searchLink fieldCode="DE" term="%22Field+emission+electron+microscopy%22">Field emission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+force+microscopy%22">Atomic force microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+roughness%22">Surface roughness</searchLink>
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  Label: Abstract
  Group: Ab
  Data: In this study, we have successfully used radio-frequency (RF) sputtering to sputter the Tb4O7 passivation layers on silicon (Si) substrates. The impact of different RF powers and durations on structural, morphological, compositional, and optical characteristics was investigated via different characterization systems. The grazing incidence X-ray diffraction (GIXRD) analysis has verified the formation of all the studied samples (A, B, C, and D) sputtered at A (80 W/30 min and then raised to 100 W/15 min), B (80 W/30 min and then raised to 100 W/35 min), C (80 W/30 min and then raised to 100 W/55 min), and D (100 W/45 min), respectively. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) were used to analyze the surface morphology of the investigated samples. Sample (C) exhibited larger grain sizes and higher surface roughness of 2.33 nm. The band gap energy (ED) values were evaluated by applying the Kubelka–Munk (KM) approach for all the studied samples, and the obtained values were within a range between 2.29 and 2.53 eV. Previous research has shown that the Tb4O7 thin film sputtered on a Si substrate for 45 min using the RF power (110 W) and annealed for 900 °C in argon (Ar) ambient resulted in the formation of crystalline Tb4O7 phase without clear explanation. This motivated us to conduct this study to observe the influence of different RF power and durations as well as determine the best RF power for the formation of the best Tb4O7 passivation layer. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s10854-024-12717-y
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        Text: English
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        PageCount: 18
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      – SubjectFull: Terbium
        Type: general
      – SubjectFull: Radiofrequency sputtering
        Type: general
      – SubjectFull: Passivation
        Type: general
      – SubjectFull: Field emission electron microscopy
        Type: general
      – SubjectFull: Atomic force microscopy
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      – SubjectFull: Surface roughness
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      – TitleFull: Influence of power and duration on RF sputtering for the formation of terbium oxide passivation layers via the argon ambient.
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              M: 05
              Text: May2024
              Type: published
              Y: 2024
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