Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes.
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| Title: | Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al |
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| Authors: | Cho, Young-Hun1 (AUTHOR), Chung, Seung-Hwan1 (AUTHOR), Park, Se-Rim1 (AUTHOR), Choi, Ji-Soo1 (AUTHOR), Moon, Soo-Young1 (AUTHOR), Lee, Hyung-Jin1 (AUTHOR), Lee, Geon-Hee1 (AUTHOR), Koo, Sang-Mo1 (AUTHOR) smkoo@kw.ac.kr |
| Source: | Journal of Materials Science: Materials in Electronics. May2024, Vol. 35 Issue 14, p1-8. 8p. |
| Abstract: | We investigated morphological properties of vertical heterojunction Schottky diodes based on (Al0.1Ga0.9)2O3/4H-SiC (AGO) thin films and analyzed the effect of post-annealing on their temperature-dependent electrical characteristics over the temperature range of 298 to 498 K. The AGO films were deposited using radio frequency sputtering and analyzed the as-deposited and N2-annealed films at 950 °C in a nitrogen atmosphere. The N2-annealed sample exhibited an estimated grain size of 63.2 nm compared to an average grain size of 43.6 nm in the as-deposited samples. As temperature increased, the barrier height (Φb) exhibited an upward trend, while the ideality factor (n) showed a declining trend. The calculated values of Φb and n in the as-deposited sample varied from 1.11 eV and 2.76 at 298 K to 1.47 eV and 1.37 at 498 K. The Schottky diode’s I–V characteristics, which vary with temperature, exhibited a Gaussian distribution. The temperature-dependent electrical characteristics of the Schottky diodes have shown a Gaussian distribution, yielding a mean barrier height of 2.08 eV and a standard deviation of 0.22 V for the as-deposited sample. In contrast, the N2-annealed sample’s mean barrier height was 1.16 eV, with a standard deviation of 0.13 V. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | We investigated morphological properties of vertical heterojunction Schottky diodes based on (Al0.1Ga0.9)2O3/4H-SiC (AGO) thin films and analyzed the effect of post-annealing on their temperature-dependent electrical characteristics over the temperature range of 298 to 498 K. The AGO films were deposited using radio frequency sputtering and analyzed the as-deposited and N2-annealed films at 950 °C in a nitrogen atmosphere. The N2-annealed sample exhibited an estimated grain size of 63.2 nm compared to an average grain size of 43.6 nm in the as-deposited samples. As temperature increased, the barrier height (Φb) exhibited an upward trend, while the ideality factor (n) showed a declining trend. The calculated values of Φb and n in the as-deposited sample varied from 1.11 eV and 2.76 at 298 K to 1.47 eV and 1.37 at 498 K. The Schottky diode’s I–V characteristics, which vary with temperature, exhibited a Gaussian distribution. The temperature-dependent electrical characteristics of the Schottky diodes have shown a Gaussian distribution, yielding a mean barrier height of 2.08 eV and a standard deviation of 0.22 V for the as-deposited sample. In contrast, the N2-annealed sample’s mean barrier height was 1.16 eV, with a standard deviation of 0.13 V. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 09574522 |
| DOI: | 10.1007/s10854-024-12551-2 |
