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Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes.

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Title: Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes.
Authors: Cho, Young-Hun1 (AUTHOR), Chung, Seung-Hwan1 (AUTHOR), Park, Se-Rim1 (AUTHOR), Choi, Ji-Soo1 (AUTHOR), Moon, Soo-Young1 (AUTHOR), Lee, Hyung-Jin1 (AUTHOR), Lee, Geon-Hee1 (AUTHOR), Koo, Sang-Mo1 (AUTHOR) smkoo@kw.ac.kr
Source: Journal of Materials Science: Materials in Electronics. May2024, Vol. 35 Issue 14, p1-8. 8p.
Abstract: We investigated morphological properties of vertical heterojunction Schottky diodes based on (Al0.1Ga0.9)2O3/4H-SiC (AGO) thin films and analyzed the effect of post-annealing on their temperature-dependent electrical characteristics over the temperature range of 298 to 498 K. The AGO films were deposited using radio frequency sputtering and analyzed the as-deposited and N2-annealed films at 950 °C in a nitrogen atmosphere. The N2-annealed sample exhibited an estimated grain size of 63.2 nm compared to an average grain size of 43.6 nm in the as-deposited samples. As temperature increased, the barrier height (Φb) exhibited an upward trend, while the ideality factor (n) showed a declining trend. The calculated values of Φb and n in the as-deposited sample varied from 1.11 eV and 2.76 at 298 K to 1.47 eV and 1.37 at 498 K. The Schottky diode’s I–V characteristics, which vary with temperature, exhibited a Gaussian distribution. The temperature-dependent electrical characteristics of the Schottky diodes have shown a Gaussian distribution, yielding a mean barrier height of 2.08 eV and a standard deviation of 0.22 V for the as-deposited sample. In contrast, the N2-annealed sample’s mean barrier height was 1.16 eV, with a standard deviation of 0.13 V. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al<subscript>0.1</subscript>Ga<subscript>0.9</subscript>)<subscript>2</subscript>O<subscript>3</subscript>/4H-SiC Schottky barrier diodes.
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  Data: <searchLink fieldCode="AR" term="%22Cho%2C+Young-Hun%22">Cho, Young-Hun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chung%2C+Seung-Hwan%22">Chung, Seung-Hwan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Park%2C+Se-Rim%22">Park, Se-Rim</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Choi%2C+Ji-Soo%22">Choi, Ji-Soo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Moon%2C+Soo-Young%22">Moon, Soo-Young</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+Hyung-Jin%22">Lee, Hyung-Jin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+Geon-Hee%22">Lee, Geon-Hee</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Koo%2C+Sang-Mo%22">Koo, Sang-Mo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> smkoo@kw.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. May2024, Vol. 35 Issue 14, p1-8. 8p.
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We investigated morphological properties of vertical heterojunction Schottky diodes based on (Al0.1Ga0.9)2O3/4H-SiC (AGO) thin films and analyzed the effect of post-annealing on their temperature-dependent electrical characteristics over the temperature range of 298 to 498 K. The AGO films were deposited using radio frequency sputtering and analyzed the as-deposited and N2-annealed films at 950 °C in a nitrogen atmosphere. The N2-annealed sample exhibited an estimated grain size of 63.2 nm compared to an average grain size of 43.6 nm in the as-deposited samples. As temperature increased, the barrier height (Φb) exhibited an upward trend, while the ideality factor (n) showed a declining trend. The calculated values of Φb and n in the as-deposited sample varied from 1.11 eV and 2.76 at 298 K to 1.47 eV and 1.37 at 498 K. The Schottky diode’s I–V characteristics, which vary with temperature, exhibited a Gaussian distribution. The temperature-dependent electrical characteristics of the Schottky diodes have shown a Gaussian distribution, yielding a mean barrier height of 2.08 eV and a standard deviation of 0.22 V for the as-deposited sample. In contrast, the N2-annealed sample’s mean barrier height was 1.16 eV, with a standard deviation of 0.13 V. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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              Text: May2024
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