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Influence of Franz Keldysh effect on the modulation depth and distortion characteristics of transistor laser.

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Title: Influence of Franz Keldysh effect on the modulation depth and distortion characteristics of transistor laser.
Authors: Ramya, R.1 (AUTHOR) ramyaravi80@gmail.com, Piramasubramanian, S.1 (AUTHOR) spirama@annauniv.edu, Madhan, M. Ganesh1 (AUTHOR) mganesh@annauniv.edu
Source: Applied Physics B: Lasers & Optics. Jun2024, Vol. 130 Issue 6, p1-11. 11p.
Subjects: Transistors, Intermodulation distortion, Equations of state, Electric fields, Intermodulation
Abstract: Numerical analysis of Transistor Laser is carried out to investigate the influence of Franz-Keldysh (F-K) Effect on the non-linear distortion characteristics such as intermodulation (IM). The device considered for the study incorporates an intrinsic GaAs absorption layer in the collector–base junction of a TL emitting around 980 nm. The base current threshold is obtained as 39 mA for the collector to base voltage of 1 V and it is discerned that the threshold current of TL is dependent on electric field in addition to the bias current. The analytical solution of rate equations at steady state is derived and compared with the numerical simulation and the same is plotted for VCB = 1 V. Moreover, maximum optical light output loss of 12 mW and 1.37 mA additional current is contributed to the collector current for collector base voltage of 3 V, under various base currents due to F-K effect. The modulation bandwidth (f-3 dB) of TL under voltage modulation is obtained as 9.63 GHz. While, under current modulation, it is found as 8.38 GHz respectively. A maximum modulation depth of 86% is obtained for IB = 1.06Ith, at 2.4 GHz. The frequency components related to intermodulation product, IMD3 (2.15 GHz) magnitudes are obtained as − 10.26 dBc, − 12.37 dBc, − 13.54 dBc and − 15.92 dBc for VCB voltage value of 0 V, 1 V, 2 V and 3 V respectively. The intermodulation product, IMD5 (2.05 GHz) magnitudes are obtained as − 18.89 dBc, − 25.76 dBc, − 28.22 dBc and − 36.05 dBc for the collector bias voltage (VCB) value of 0 V, 1 V, 2 V and 3 V respectively. In both cases, the intermodulation is found to decrease with increase in F-K absorption. [ABSTRACT FROM AUTHOR]
Copyright of Applied Physics B: Lasers & Optics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Influence of Franz Keldysh effect on the modulation depth and distortion characteristics of transistor laser.
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  Data: <searchLink fieldCode="AR" term="%22Ramya%2C+R%2E%22">Ramya, R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> ramyaravi80@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Piramasubramanian%2C+S%2E%22">Piramasubramanian, S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> spirama@annauniv.edu</i><br /><searchLink fieldCode="AR" term="%22Madhan%2C+M%2E+Ganesh%22">Madhan, M. Ganesh</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> mganesh@annauniv.edu</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+B%3A+Lasers+%26+Optics%22">Applied Physics B: Lasers & Optics</searchLink>. Jun2024, Vol. 130 Issue 6, p1-11. 11p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Intermodulation+distortion%22">Intermodulation distortion</searchLink><br /><searchLink fieldCode="DE" term="%22Equations+of+state%22">Equations of state</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+fields%22">Electric fields</searchLink><br /><searchLink fieldCode="DE" term="%22Intermodulation%22">Intermodulation</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Numerical analysis of Transistor Laser is carried out to investigate the influence of Franz-Keldysh (F-K) Effect on the non-linear distortion characteristics such as intermodulation (IM). The device considered for the study incorporates an intrinsic GaAs absorption layer in the collector–base junction of a TL emitting around 980 nm. The base current threshold is obtained as 39 mA for the collector to base voltage of 1 V and it is discerned that the threshold current of TL is dependent on electric field in addition to the bias current. The analytical solution of rate equations at steady state is derived and compared with the numerical simulation and the same is plotted for VCB = 1 V. Moreover, maximum optical light output loss of 12 mW and 1.37 mA additional current is contributed to the collector current for collector base voltage of 3 V, under various base currents due to F-K effect. The modulation bandwidth (f-3 dB) of TL under voltage modulation is obtained as 9.63 GHz. While, under current modulation, it is found as 8.38 GHz respectively. A maximum modulation depth of 86% is obtained for IB = 1.06Ith, at 2.4 GHz. The frequency components related to intermodulation product, IMD3 (2.15 GHz) magnitudes are obtained as − 10.26 dBc, − 12.37 dBc, − 13.54 dBc and − 15.92 dBc for VCB voltage value of 0 V, 1 V, 2 V and 3 V respectively. The intermodulation product, IMD5 (2.05 GHz) magnitudes are obtained as − 18.89 dBc, − 25.76 dBc, − 28.22 dBc and − 36.05 dBc for the collector bias voltage (VCB) value of 0 V, 1 V, 2 V and 3 V respectively. In both cases, the intermodulation is found to decrease with increase in F-K absorption. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Applied Physics B: Lasers & Optics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s00340-024-08224-x
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        Text: English
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        PageCount: 11
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      – SubjectFull: Transistors
        Type: general
      – SubjectFull: Intermodulation distortion
        Type: general
      – SubjectFull: Equations of state
        Type: general
      – SubjectFull: Electric fields
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      – SubjectFull: Intermodulation
        Type: general
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      – TitleFull: Influence of Franz Keldysh effect on the modulation depth and distortion characteristics of transistor laser.
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            NameFull: Ramya, R.
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            NameFull: Piramasubramanian, S.
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            – D: 01
              M: 06
              Text: Jun2024
              Type: published
              Y: 2024
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