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Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method.

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Title: Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method.
Authors: Liao, Tsung-I1 (AUTHOR), Chang, Sheng-Po2 (AUTHOR) changsp@nkust.edu.tw, Shi, Wen-Xiang3 (AUTHOR), Chang, Shoou-Jinn1,3 (AUTHOR), Chen, Jone-Fang3 (AUTHOR)
Source: Journal of Electronic Materials. Jun2024, Vol. 53 Issue 6, p3063-3069. 7p.
Subjects: Reactive sputtering, Reactive oxygen species, Indium tin oxide, Transistors, Charge carrier mobility, Thin films, Oxygen
Abstract: The thin film of indium gallium tin oxide (IGTO) was deposited by the RF magnetron sputtering system with different oxygen flow ratios, which controls the numbers of defects and free carriers to change the characteristics of thin-film transistors ((TFTs). We determined the subgap density-of-states (DOS) from the transfer characteristics curve by the unified subthreshold coupling factor technique to analyze the response of oxygen-related trap sites within the thin films fabricated under different oxygen flows. We used Python to fit the DOS data with a combination of two exponential forms, inferring that, during the increase in the oxygen flow ratio, acceptor-like oxygen-related trap sites can be gradually compensated. The IGTO TFTs exhibit optimized performance when subjected to annealing at 200 °C for 1 h with a 5% oxygen flow ratio, showing a threshold voltage (Vth) of 1.76 V, a field-effect mobility of 0.355 cm2/V s, an impressive on/off drain current ratio of 1.42 × 106, and a subthreshold swing (SS) of 0.665 V/decade. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method.
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  Data: <searchLink fieldCode="AR" term="%22Liao%2C+Tsung-I%22">Liao, Tsung-I</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chang%2C+Sheng-Po%22">Chang, Sheng-Po</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> changsp@nkust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Shi%2C+Wen-Xiang%22">Shi, Wen-Xiang</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chang%2C+Shoou-Jinn%22">Chang, Shoou-Jinn</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Jone-Fang%22">Chen, Jone-Fang</searchLink><relatesTo>3</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Jun2024, Vol. 53 Issue 6, p3063-3069. 7p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Reactive+sputtering%22">Reactive sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Reactive+oxygen+species%22">Reactive oxygen species</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+tin+oxide%22">Indium tin oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carrier+mobility%22">Charge carrier mobility</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Oxygen%22">Oxygen</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The thin film of indium gallium tin oxide (IGTO) was deposited by the RF magnetron sputtering system with different oxygen flow ratios, which controls the numbers of defects and free carriers to change the characteristics of thin-film transistors ((TFTs). We determined the subgap density-of-states (DOS) from the transfer characteristics curve by the unified subthreshold coupling factor technique to analyze the response of oxygen-related trap sites within the thin films fabricated under different oxygen flows. We used Python to fit the DOS data with a combination of two exponential forms, inferring that, during the increase in the oxygen flow ratio, acceptor-like oxygen-related trap sites can be gradually compensated. The IGTO TFTs exhibit optimized performance when subjected to annealing at 200 °C for 1 h with a 5% oxygen flow ratio, showing a threshold voltage (Vth) of 1.76 V, a field-effect mobility of 0.355 cm2/V s, an impressive on/off drain current ratio of 1.42 × 106, and a subthreshold swing (SS) of 0.665 V/decade. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-024-11035-7
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 3063
    Subjects:
      – SubjectFull: Reactive sputtering
        Type: general
      – SubjectFull: Reactive oxygen species
        Type: general
      – SubjectFull: Indium tin oxide
        Type: general
      – SubjectFull: Transistors
        Type: general
      – SubjectFull: Charge carrier mobility
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Oxygen
        Type: general
    Titles:
      – TitleFull: Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Liao, Tsung-I
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          Name:
            NameFull: Chang, Sheng-Po
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            NameFull: Shi, Wen-Xiang
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            NameFull: Chang, Shoou-Jinn
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            NameFull: Chen, Jone-Fang
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            – D: 01
              M: 06
              Text: Jun2024
              Type: published
              Y: 2024
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              Value: 53
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