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Electrical Response of Al Based Zr-Doped Stacked Tri-Layer HfO2 Deposited at Various Substrate Temperature.

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Title: Electrical Response of Al Based Zr-Doped Stacked Tri-Layer HfO2 Deposited at Various Substrate Temperature.
Authors: Sultana, R.1 (AUTHOR) sultanarezwana11@gmail.com, Islam, K.2 (AUTHOR), Chakraborty, S.1 (AUTHOR)
Source: Russian Physics Journal. Jul2024, Vol. 67 Issue 7, p923-931. 9p.
Subjects: Substrates (Materials science), DC sputtering, Radiofrequency sputtering, Magnetron sputtering, Hysteresis loop
Abstract: This study examines how the substrate temperature affects the electrical characteristics of the Zr-doped HfO2/Al/Zr-doped HfO2 (HZO/Al/HZO) tri-layer stack. Tri-layer stack is deposited by a simultaneous use of RF magnetron sputtering for HfO2 and DC magnetron sputtering for Zr and Al targets. During deposition, the substrate temperature is varied from 25 to 300°C. The observed hysteresis loop is prominent for the stack deposited at room temperature, while it becomes minute at higher temperatures. Interface trap density and oxide charge density of the tri-layer stack are minimum at 300°C and maximum at room temperatures. Frequency dispersion is detected in the stack deposited at room temperature, but it disappears in stacks deposited at 300°C. In addition, compared to other tri-layer stacks, the stack deposited at 300°C shows good conductivity. Therefore, compared to other samples, the tri-layer stack deposited at 300°C has improved electrical characteristics. It is shown that the substrate temperature has a significant impact on the electrical properties of the stack. [ABSTRACT FROM AUTHOR]
Copyright of Russian Physics Journal is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Electrical Response of Al Based Zr-Doped Stacked Tri-Layer HfO<subscript>2</subscript> Deposited at Various Substrate Temperature.
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  Data: <searchLink fieldCode="AR" term="%22Sultana%2C+R%2E%22">Sultana, R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> sultanarezwana11@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Islam%2C+K%2E%22">Islam, K.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chakraborty%2C+S%2E%22">Chakraborty, S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Russian+Physics+Journal%22">Russian Physics Journal</searchLink>. Jul2024, Vol. 67 Issue 7, p923-931. 9p.
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  Data: <searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22DC+sputtering%22">DC sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Radiofrequency+sputtering%22">Radiofrequency sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetron+sputtering%22">Magnetron sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Hysteresis+loop%22">Hysteresis loop</searchLink>
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  Label: Abstract
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  Data: This study examines how the substrate temperature affects the electrical characteristics of the Zr-doped HfO2/Al/Zr-doped HfO2 (HZO/Al/HZO) tri-layer stack. Tri-layer stack is deposited by a simultaneous use of RF magnetron sputtering for HfO2 and DC magnetron sputtering for Zr and Al targets. During deposition, the substrate temperature is varied from 25 to 300°C. The observed hysteresis loop is prominent for the stack deposited at room temperature, while it becomes minute at higher temperatures. Interface trap density and oxide charge density of the tri-layer stack are minimum at 300°C and maximum at room temperatures. Frequency dispersion is detected in the stack deposited at room temperature, but it disappears in stacks deposited at 300°C. In addition, compared to other tri-layer stacks, the stack deposited at 300°C shows good conductivity. Therefore, compared to other samples, the tri-layer stack deposited at 300°C has improved electrical characteristics. It is shown that the substrate temperature has a significant impact on the electrical properties of the stack. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Russian Physics Journal is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s11182-024-03198-x
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      – Code: eng
        Text: English
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        PageCount: 9
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        Type: general
      – SubjectFull: DC sputtering
        Type: general
      – SubjectFull: Radiofrequency sputtering
        Type: general
      – SubjectFull: Magnetron sputtering
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      – SubjectFull: Hysteresis loop
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      – TitleFull: Electrical Response of Al Based Zr-Doped Stacked Tri-Layer HfO2 Deposited at Various Substrate Temperature.
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            – D: 01
              M: 07
              Text: Jul2024
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              Y: 2024
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