Electrical Response of Al Based Zr-Doped Stacked Tri-Layer HfO2 Deposited at Various Substrate Temperature.
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| Title: | Electrical Response of Al Based Zr-Doped Stacked Tri-Layer HfO |
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| Authors: | Sultana, R.1 (AUTHOR) sultanarezwana11@gmail.com, Islam, K.2 (AUTHOR), Chakraborty, S.1 (AUTHOR) |
| Source: | Russian Physics Journal. Jul2024, Vol. 67 Issue 7, p923-931. 9p. |
| Subjects: | Substrates (Materials science), DC sputtering, Radiofrequency sputtering, Magnetron sputtering, Hysteresis loop |
| Abstract: | This study examines how the substrate temperature affects the electrical characteristics of the Zr-doped HfO2/Al/Zr-doped HfO2 (HZO/Al/HZO) tri-layer stack. Tri-layer stack is deposited by a simultaneous use of RF magnetron sputtering for HfO2 and DC magnetron sputtering for Zr and Al targets. During deposition, the substrate temperature is varied from 25 to 300°C. The observed hysteresis loop is prominent for the stack deposited at room temperature, while it becomes minute at higher temperatures. Interface trap density and oxide charge density of the tri-layer stack are minimum at 300°C and maximum at room temperatures. Frequency dispersion is detected in the stack deposited at room temperature, but it disappears in stacks deposited at 300°C. In addition, compared to other tri-layer stacks, the stack deposited at 300°C shows good conductivity. Therefore, compared to other samples, the tri-layer stack deposited at 300°C has improved electrical characteristics. It is shown that the substrate temperature has a significant impact on the electrical properties of the stack. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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