pH effect in Langmuir–Blodgett self-assembly of MoS2 and WS2 thin films.

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Title: pH effect in Langmuir–Blodgett self-assembly of MoS2 and WS2 thin films.
Authors: Rosales Hernández, Aldo Armando1 (AUTHOR) aldo.rosales@cinvestav.mx, Córdova Morales, Pablo2 (AUTHOR), Gujari, Sandeep Kumar1 (AUTHOR), García Rocha, Miguel3 (AUTHOR), Valdez Pérez, Donato3 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. Jul2024, Vol. 35 Issue 19, p1-8. 8p.
Abstract: We reported Langmuir–Blodgett films of molybdenum disulphide and tungsten disulfide and studied the formation of MoS 2 and WS 2 layers. The effect of the subphase pH is investigated. Also, the influence of the subphase conditions on the number of layers was reported. By varying the pH of the buffer solution subphase, the solvent-to-nanoparticle interaction is changed and the compression of the layer during deposition is influenced. The stacking of the MoS 2 and WS 2 crystalline structure under the influence of subphase pH and the material concentration were investigated. Langmuir layers assembly is a useful method to manipulate the distribution of WS 2 and MoS 2 . Successful deposition of dichalcogenides at the air–water interface on silicon substrate was performed using Balance Langmuir–Blodgett technique. The characterization of WS 2 and films MoS 2 with X-ray diffraction, Raman spectroscopy, atomic force microscopy and scanning electron microscopy was carried out. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: pH effect in Langmuir–Blodgett self-assembly of MoS<subscript>2</subscript> and WS<subscript>2</subscript> thin films.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Rosales+Hernández%2C+Aldo+Armando%22">Rosales Hernández, Aldo Armando</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> aldo.rosales@cinvestav.mx</i><br /><searchLink fieldCode="AR" term="%22Córdova+Morales%2C+Pablo%22">Córdova Morales, Pablo</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gujari%2C+Sandeep+Kumar%22">Gujari, Sandeep Kumar</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22García+Rocha%2C+Miguel%22">García Rocha, Miguel</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Valdez+Pérez%2C+Donato%22">Valdez Pérez, Donato</searchLink><relatesTo>3</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Jul2024, Vol. 35 Issue 19, p1-8. 8p.
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We reported Langmuir–Blodgett films of molybdenum disulphide and tungsten disulfide and studied the formation of MoS 2 and WS 2 layers. The effect of the subphase pH is investigated. Also, the influence of the subphase conditions on the number of layers was reported. By varying the pH of the buffer solution subphase, the solvent-to-nanoparticle interaction is changed and the compression of the layer during deposition is influenced. The stacking of the MoS 2 and WS 2 crystalline structure under the influence of subphase pH and the material concentration were investigated. Langmuir layers assembly is a useful method to manipulate the distribution of WS 2 and MoS 2 . Successful deposition of dichalcogenides at the air–water interface on silicon substrate was performed using Balance Langmuir–Blodgett technique. The characterization of WS 2 and films MoS 2 with X-ray diffraction, Raman spectroscopy, atomic force microscopy and scanning electron microscopy was carried out. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-024-12994-7
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 1
    Titles:
      – TitleFull: pH effect in Langmuir–Blodgett self-assembly of MoS2 and WS2 thin films.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Rosales Hernández, Aldo Armando
      – PersonEntity:
          Name:
            NameFull: Córdova Morales, Pablo
      – PersonEntity:
          Name:
            NameFull: Gujari, Sandeep Kumar
      – PersonEntity:
          Name:
            NameFull: García Rocha, Miguel
      – PersonEntity:
          Name:
            NameFull: Valdez Pérez, Donato
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 35
            – Type: issue
              Value: 19
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1