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Modified graphene by 1 MeV electron irradiation in betavoltaic cell.

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Title: Modified graphene by 1 MeV electron irradiation in betavoltaic cell.
Authors: Wang, Xiaoyu1,2 (AUTHOR) wangxy@inest.cas.cn, Feng, Jiaming1 (AUTHOR), He, Houjun2 (AUTHOR), Han, Yuncheng1,2 (AUTHOR) yuncheng.han@inest.cas.cn
Source: Nuclear Instruments & Methods in Physics Research Section B. Sep2024, Vol. 554, pN.PAG-N.PAG. 1p.
Subjects: Irradiation, Band gaps, Graphene, Open-circuit voltage, Electrons, Power density
Abstract: A facile approach for graphene modification based on 1 MeV electron irradiation is proposed here to produce a graphene/Si betavoltaic cell. Compared to the unirradiated graphene, graphene-modified under the dose rate of 5 kGy/pass (with accumulated doses of 10 kGy) and 10 kGy/pass (with accumulated doses of 20 kGy) electron irradiation, the output power density of graphene/Si betavoltaic cells were increased by 2 and 3 times, respectively. The effect of different dose rates (5–20 kGy/pass) and accumulated irradiation doses (0–40 kGy) electron irradiation on the doping, elemental morphology, and the magnitude of induced defects of graphene were further studied. The material characterization techniques demonstrated that different dose rates and accumulated doses of electron irradiation can introduce varying degrees of partial defects in graphene, resulting in different regulations of doping and control band gaps of graphene. Concurrently, the results of XPS and Raman spectroscopy revealed that the sp2 hybrids of graphene can be converted into sp3 hybrids by appropriate electron irradiation and has light N-type doping characteristics. Thus, the irradiated graphene/Si betavoltaic cells can maintain higher open circuit voltage. Therefore, the graphene-modified by appropriate electron irradiation provides a facile strategy to improve the output performance of graphene/Si betavoltaic cells. [ABSTRACT FROM AUTHOR]
Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 178502914
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  Data: Modified graphene by 1 MeV electron irradiation in betavoltaic cell.
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  Data: <searchLink fieldCode="AR" term="%22Wang%2C+Xiaoyu%22">Wang, Xiaoyu</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> wangxy@inest.cas.cn</i><br /><searchLink fieldCode="AR" term="%22Feng%2C+Jiaming%22">Feng, Jiaming</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22He%2C+Houjun%22">He, Houjun</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Han%2C+Yuncheng%22">Han, Yuncheng</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> yuncheng.han@inest.cas.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+B%22">Nuclear Instruments & Methods in Physics Research Section B</searchLink>. Sep2024, Vol. 554, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Irradiation%22">Irradiation</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink><br /><searchLink fieldCode="DE" term="%22Open-circuit+voltage%22">Open-circuit voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Electrons%22">Electrons</searchLink><br /><searchLink fieldCode="DE" term="%22Power+density%22">Power density</searchLink>
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  Data: A facile approach for graphene modification based on 1 MeV electron irradiation is proposed here to produce a graphene/Si betavoltaic cell. Compared to the unirradiated graphene, graphene-modified under the dose rate of 5 kGy/pass (with accumulated doses of 10 kGy) and 10 kGy/pass (with accumulated doses of 20 kGy) electron irradiation, the output power density of graphene/Si betavoltaic cells were increased by 2 and 3 times, respectively. The effect of different dose rates (5–20 kGy/pass) and accumulated irradiation doses (0–40 kGy) electron irradiation on the doping, elemental morphology, and the magnitude of induced defects of graphene were further studied. The material characterization techniques demonstrated that different dose rates and accumulated doses of electron irradiation can introduce varying degrees of partial defects in graphene, resulting in different regulations of doping and control band gaps of graphene. Concurrently, the results of XPS and Raman spectroscopy revealed that the sp2 hybrids of graphene can be converted into sp3 hybrids by appropriate electron irradiation and has light N-type doping characteristics. Thus, the irradiated graphene/Si betavoltaic cells can maintain higher open circuit voltage. Therefore, the graphene-modified by appropriate electron irradiation provides a facile strategy to improve the output performance of graphene/Si betavoltaic cells. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1016/j.nimb.2024.165410
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      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Irradiation
        Type: general
      – SubjectFull: Band gaps
        Type: general
      – SubjectFull: Graphene
        Type: general
      – SubjectFull: Open-circuit voltage
        Type: general
      – SubjectFull: Electrons
        Type: general
      – SubjectFull: Power density
        Type: general
    Titles:
      – TitleFull: Modified graphene by 1 MeV electron irradiation in betavoltaic cell.
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            NameFull: Wang, Xiaoyu
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            NameFull: Feng, Jiaming
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            NameFull: He, Houjun
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            NameFull: Han, Yuncheng
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            – D: 01
              M: 09
              Text: Sep2024
              Type: published
              Y: 2024
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              Value: 554
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            – TitleFull: Nuclear Instruments & Methods in Physics Research Section B
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