Modified graphene by 1 MeV electron irradiation in betavoltaic cell.
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| Title: | Modified graphene by 1 MeV electron irradiation in betavoltaic cell. |
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| Authors: | Wang, Xiaoyu1,2 (AUTHOR) wangxy@inest.cas.cn, Feng, Jiaming1 (AUTHOR), He, Houjun2 (AUTHOR), Han, Yuncheng1,2 (AUTHOR) yuncheng.han@inest.cas.cn |
| Source: | Nuclear Instruments & Methods in Physics Research Section B. Sep2024, Vol. 554, pN.PAG-N.PAG. 1p. |
| Subjects: | Irradiation, Band gaps, Graphene, Open-circuit voltage, Electrons, Power density |
| Abstract: | A facile approach for graphene modification based on 1 MeV electron irradiation is proposed here to produce a graphene/Si betavoltaic cell. Compared to the unirradiated graphene, graphene-modified under the dose rate of 5 kGy/pass (with accumulated doses of 10 kGy) and 10 kGy/pass (with accumulated doses of 20 kGy) electron irradiation, the output power density of graphene/Si betavoltaic cells were increased by 2 and 3 times, respectively. The effect of different dose rates (5–20 kGy/pass) and accumulated irradiation doses (0–40 kGy) electron irradiation on the doping, elemental morphology, and the magnitude of induced defects of graphene were further studied. The material characterization techniques demonstrated that different dose rates and accumulated doses of electron irradiation can introduce varying degrees of partial defects in graphene, resulting in different regulations of doping and control band gaps of graphene. Concurrently, the results of XPS and Raman spectroscopy revealed that the sp2 hybrids of graphene can be converted into sp3 hybrids by appropriate electron irradiation and has light N-type doping characteristics. Thus, the irradiated graphene/Si betavoltaic cells can maintain higher open circuit voltage. Therefore, the graphene-modified by appropriate electron irradiation provides a facile strategy to improve the output performance of graphene/Si betavoltaic cells. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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