View in EDS HTML Full Text PDF Full Text

Analysis of interface states in Zn/p-NiO Schottky barrier diode.

Saved in:
Bibliographic Details
Title: Analysis of interface states in Zn/p-NiO Schottky barrier diode.
Authors: Tyagi, Manisha1 (AUTHOR) manishatyagi733@kmc.du.ac.in, Raj, V. Bhasker2 (AUTHOR)
Source: Journal of Materials Science: Materials in Electronics. Aug2024, Vol. 35 Issue 22, p1-14. 14p.
Subjects: Schottky barrier diodes, Radiofrequency sputtering, Substrates (Materials science), Density of states, Thin films
Abstract: A Schottky barrier diode (SBD) based on p-NiO thin film and Zn metal has been fabricated on a Pt/Si substrate using the RF sputtering technique. To get information regarding the interface trap states, a thorough and methodical analysis of the variation of conductance (G) with frequency and capacitance with voltage is carried out. The Zn/p-NiO SBD's conductance-frequency (Gs-ω) properties have been used to calculate the variation of density of states (at the interface) with energy along with relaxation time. The energy band alignment of the Zn metal and p-NiO semiconducting layer are presented in both the isolating and contact modes respectively. The characteristic parameters obtained for the Zn/NiO Schottky barrier diode (SBD) are found to be very low as compared to the given results in the literature, which becomes the essential condition for designing devices of fast speed. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 178776744
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Analysis of interface states in Zn/p-NiO Schottky barrier diode.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Tyagi%2C+Manisha%22">Tyagi, Manisha</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> manishatyagi733@kmc.du.ac.in</i><br /><searchLink fieldCode="AR" term="%22Raj%2C+V%2E+Bhasker%22">Raj, V. Bhasker</searchLink><relatesTo>2</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Aug2024, Vol. 35 Issue 22, p1-14. 14p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Schottky+barrier+diodes%22">Schottky barrier diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Radiofrequency+sputtering%22">Radiofrequency sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Density+of+states%22">Density of states</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A Schottky barrier diode (SBD) based on p-NiO thin film and Zn metal has been fabricated on a Pt/Si substrate using the RF sputtering technique. To get information regarding the interface trap states, a thorough and methodical analysis of the variation of conductance (G) with frequency and capacitance with voltage is carried out. The Zn/p-NiO SBD's conductance-frequency (Gs-ω) properties have been used to calculate the variation of density of states (at the interface) with energy along with relaxation time. The energy band alignment of the Zn metal and p-NiO semiconducting layer are presented in both the isolating and contact modes respectively. The characteristic parameters obtained for the Zn/NiO Schottky barrier diode (SBD) are found to be very low as compared to the given results in the literature, which becomes the essential condition for designing devices of fast speed. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=178776744
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-024-13266-0
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 14
        StartPage: 1
    Subjects:
      – SubjectFull: Schottky barrier diodes
        Type: general
      – SubjectFull: Radiofrequency sputtering
        Type: general
      – SubjectFull: Substrates (Materials science)
        Type: general
      – SubjectFull: Density of states
        Type: general
      – SubjectFull: Thin films
        Type: general
    Titles:
      – TitleFull: Analysis of interface states in Zn/p-NiO Schottky barrier diode.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Tyagi, Manisha
      – PersonEntity:
          Name:
            NameFull: Raj, V. Bhasker
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 08
              Text: Aug2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 35
            – Type: issue
              Value: 22
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1