Bibliographic Details
| Title: |
Improving crystal quality of Er-doped Gd2O3 grown on a Si(111) substrate by inserting a bifunctional GdOx layer. |
| Authors: |
Inaba, T.1 (AUTHOR) tomohiro.inaba@ntt.com, Xu, X.1 (AUTHOR), Omi, H.2 (AUTHOR), Yamamoto, H.1 (AUTHOR), Tawara, T.3 (AUTHOR), Sanada, H.1 (AUTHOR) |
| Source: |
CrystEngComm. 8/21/2024, Vol. 26 Issue 31, p4190-4194. 5p. |
| Subjects: |
Substrates (Materials science), Biochemical substrates, Oxide coating, Optical devices, Epitaxy |
| Abstract: |
We developed a growth technique that improves the crystallinity and optical properties (photoluminescence intensity and lifetime) of Er-doped Gd2O3 (Er:Gd2O3) on a Si(111) substrate. Deposition of thin (7.5 Å thick) Gd metal on the SiOx-covered surface of the Si(111) substrate prior to the growth of Er:Gd2O3, and the successive, thermally-induced redox reaction gives rise to the solid-phase epitaxy of GdOx on Si, which protects Si from unintentional oxidation and fosters the epitaxial growth of Er:Gd2O3 on it; i.e., GdOx serves as a protection and seed (bifunctional) layer. This technique is promising for developing high-performance optical devices using high-quality rare-earth oxide films grown on Si substrates. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
