Investigating the performance of a novel silicon based p-i-n modulator with enhanced carrier injection.
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| Title: | Investigating the performance of a novel silicon based p-i-n modulator with enhanced carrier injection. |
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| Authors: | A, Krishnanunni R.1 (AUTHOR), Ravindran, Sooraj1 (AUTHOR) sooraj.r@iist.ac.in |
| Source: | Optical & Quantum Electronics. Aug2024, Vol. 56 Issue 8, p1-22. 22p. |
| Subjects: | Phased array antennas, Plasma diffusion, Integrated circuits, Beam steering, Refractive index |
| Abstract: | The requirement of a high speed and compact phase modulator is critical for optical phased arrays (OPA) and photonic integrated circuits as it gives the space for additional devices to be incorporated in the circuit. In this study, we propose a novel design for a p-i-n phase modulator, in which, by optimizing the structural configuration, we achieve a significant increase in carrier injection, resulting in an increased refractive index change of − 0.00703 at a low voltage of 1.2 V, while also providing a π phase shift within a compact length of approximately 110 µm. Additionally, our device exhibits a high switching speed of up to 25 GHz and ensures distortion-free transmission of message signals at rates of up to 23 Gbps. These results, coupled with its exceptional optical characteristics, position our device as a promising candidate for optical beam steering applications and integration into dense, energy-efficient, and high-speed photonic integrated circuits. [ABSTRACT FROM AUTHOR] |
| Copyright of Optical & Quantum Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 179067310 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Investigating the performance of a novel silicon based p-i-n modulator with enhanced carrier injection. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22A%2C+Krishnanunni+R%2E%22">A, Krishnanunni R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ravindran%2C+Sooraj%22">Ravindran, Sooraj</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> sooraj.r@iist.ac.in</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Optical+%26+Quantum+Electronics%22">Optical & Quantum Electronics</searchLink>. Aug2024, Vol. 56 Issue 8, p1-22. 22p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Phased+array+antennas%22">Phased array antennas</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+diffusion%22">Plasma diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+circuits%22">Integrated circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Beam+steering%22">Beam steering</searchLink><br /><searchLink fieldCode="DE" term="%22Refractive+index%22">Refractive index</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The requirement of a high speed and compact phase modulator is critical for optical phased arrays (OPA) and photonic integrated circuits as it gives the space for additional devices to be incorporated in the circuit. In this study, we propose a novel design for a p-i-n phase modulator, in which, by optimizing the structural configuration, we achieve a significant increase in carrier injection, resulting in an increased refractive index change of − 0.00703 at a low voltage of 1.2 V, while also providing a π phase shift within a compact length of approximately 110 µm. Additionally, our device exhibits a high switching speed of up to 25 GHz and ensures distortion-free transmission of message signals at rates of up to 23 Gbps. These results, coupled with its exceptional optical characteristics, position our device as a promising candidate for optical beam steering applications and integration into dense, energy-efficient, and high-speed photonic integrated circuits. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Optical & Quantum Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11082-024-07284-9 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 22 StartPage: 1 Subjects: – SubjectFull: Phased array antennas Type: general – SubjectFull: Plasma diffusion Type: general – SubjectFull: Integrated circuits Type: general – SubjectFull: Beam steering Type: general – SubjectFull: Refractive index Type: general Titles: – TitleFull: Investigating the performance of a novel silicon based p-i-n modulator with enhanced carrier injection. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: A, Krishnanunni R. – PersonEntity: Name: NameFull: Ravindran, Sooraj IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 03068919 Numbering: – Type: volume Value: 56 – Type: issue Value: 8 Titles: – TitleFull: Optical & Quantum Electronics Type: main |
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