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Comprehensive characterization of a high‐performance double heterojunction InGaAs pHEMT for linear power‐efficient amplifiers applications.

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Title: Comprehensive characterization of a high‐performance double heterojunction InGaAs pHEMT for linear power‐efficient amplifiers applications.
Authors: Sultana, Sadia1 (AUTHOR) sadia@cu.ac.bd, Naima, Jannatul2 (AUTHOR), Alam, Md. Shamsul1 (AUTHOR), Alam, Md. Shah1 (AUTHOR), Crupi, Giovanni3 (AUTHOR), Alim, Mohammad A.1 (AUTHOR)
Source: International Journal of Numerical Modelling. Jul2024, Vol. 37 Issue 4, p1-14. 14p.
Subjects: Intermodulation distortion, Indium gallium arsenide, Electrostatics, Gallium arsenide, Auditing standards
Abstract: This article centers its attention on the phenomenon of electrostatics, linearity, analogue, and RF performance of a 0.5 μm × (2 × 100) μm double heterojunction AlGaAs/InGaAs/GaAs pHEMT using on‐wafer DC and RF measurements up to 50 GHz. With a high ION/IOFF ratio (1.21 × 107) and low subthreshold slope (72.7 mV/dec), a flat and high transconductance over a wide range of Vgs has been achieved for the tested device. Furthermore, the input intercept and higher‐order voltage intercept point both attained large values with low intermodulation and harmonic distortion. Regarding RF parameters, the intrinsic gain has been achieved up to 28 dB. The GBW up to 750 GHz was attained, with the highest fT and fmax values being 24.5 GHz and 99.3 GHz, respectively. Since the device has very low intrinsic capacitance, parameters like TFP, GFP, and GTFP also showed excellent results. The high intrinsic gain and TGF indicate ample potential of the device for use as an amplifier. Investigating the parameters reveals the device to have very good linearity and amplifying capability. [ABSTRACT FROM AUTHOR]
Copyright of International Journal of Numerical Modelling is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 179110238
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Comprehensive characterization of a high‐performance double heterojunction InGaAs pHEMT for linear power‐efficient amplifiers applications.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Sultana%2C+Sadia%22">Sultana, Sadia</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> sadia@cu.ac.bd</i><br /><searchLink fieldCode="AR" term="%22Naima%2C+Jannatul%22">Naima, Jannatul</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Alam%2C+Md%2E+Shamsul%22">Alam, Md. Shamsul</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Alam%2C+Md%2E+Shah%22">Alam, Md. Shah</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Crupi%2C+Giovanni%22">Crupi, Giovanni</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Alim%2C+Mohammad+A%2E%22">Alim, Mohammad A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Numerical+Modelling%22">International Journal of Numerical Modelling</searchLink>. Jul2024, Vol. 37 Issue 4, p1-14. 14p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Intermodulation+distortion%22">Intermodulation distortion</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+gallium+arsenide%22">Indium gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Electrostatics%22">Electrostatics</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+arsenide%22">Gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Auditing+standards%22">Auditing standards</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This article centers its attention on the phenomenon of electrostatics, linearity, analogue, and RF performance of a 0.5 μm × (2 × 100) μm double heterojunction AlGaAs/InGaAs/GaAs pHEMT using on‐wafer DC and RF measurements up to 50 GHz. With a high ION/IOFF ratio (1.21 × 107) and low subthreshold slope (72.7 mV/dec), a flat and high transconductance over a wide range of Vgs has been achieved for the tested device. Furthermore, the input intercept and higher‐order voltage intercept point both attained large values with low intermodulation and harmonic distortion. Regarding RF parameters, the intrinsic gain has been achieved up to 28 dB. The GBW up to 750 GHz was attained, with the highest fT and fmax values being 24.5 GHz and 99.3 GHz, respectively. Since the device has very low intrinsic capacitance, parameters like TFP, GFP, and GTFP also showed excellent results. The high intrinsic gain and TGF indicate ample potential of the device for use as an amplifier. Investigating the parameters reveals the device to have very good linearity and amplifying capability. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of International Journal of Numerical Modelling is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1002/jnm.3277
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 14
        StartPage: 1
    Subjects:
      – SubjectFull: Intermodulation distortion
        Type: general
      – SubjectFull: Indium gallium arsenide
        Type: general
      – SubjectFull: Electrostatics
        Type: general
      – SubjectFull: Gallium arsenide
        Type: general
      – SubjectFull: Auditing standards
        Type: general
    Titles:
      – TitleFull: Comprehensive characterization of a high‐performance double heterojunction InGaAs pHEMT for linear power‐efficient amplifiers applications.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Sultana, Sadia
      – PersonEntity:
          Name:
            NameFull: Naima, Jannatul
      – PersonEntity:
          Name:
            NameFull: Alam, Md. Shamsul
      – PersonEntity:
          Name:
            NameFull: Alam, Md. Shah
      – PersonEntity:
          Name:
            NameFull: Crupi, Giovanni
      – PersonEntity:
          Name:
            NameFull: Alim, Mohammad A.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 08943370
          Numbering:
            – Type: volume
              Value: 37
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: International Journal of Numerical Modelling
              Type: main
ResultId 1