View in EDS

Optimization of surface filtration to enhance wafer uniformity by removing large particle in ceria slurry.

Saved in:
Bibliographic Details
Title: Optimization of surface filtration to enhance wafer uniformity by removing large particle in ceria slurry.
Authors: Oh, Seungjun1 (AUTHOR), Back, Geumji1,2 (AUTHOR), Park, Sanghyeon1 (AUTHOR), Lee, HunWook3 (AUTHOR), Seo, Heedo3 (AUTHOR), Kim, Yoonsub3 (AUTHOR), Kim, Taesung1,2,4 (AUTHOR) tkim@skku.edu
Source: Materials Science in Semiconductor Processing. Nov2024, Vol. 183, pN.PAG-N.PAG. 1p.
Subjects: Particle size distribution, Semiconductor industry, Cerium oxides, Performance management, Uniformity
Abstract: Owing to the limitations of scaling down, the development of complex structures for chip design is progressing in the semiconductor industry. As a result, the chemical mechanical polishing (CMP) process has become essential for the precise control of micro-level steps and for maintaining surface uniformity between layers during the stacking process. Structural management and improved performance of the consumables used in CMP processes are required. In particular, controlling the abrasive particles in the slurry that directly contact the wafer surface is crucial. Large particles within the slurry can occur scratches and cause non-uniformity in the polishing process, thus the particle size distribution of the slurry must be regulated. In this study, two types of filtration systems were constructed to determine the optimal conditions for CMP of ceria slurry. Depth filtration effectively removes particles through a cake layer formation mechanism but has limitations in achieving a consistent pore size within the fiber layer. Consequently, separation efficiency for particle sizes is relatively low. In contrast, surface filtration consisting of a single membrane demonstrates a consistent correlation between pore size and the size of the filtered particles, resulting in high particle removal efficiency. The pore size capable of removing large particles without active particle loss was 200 nm. After evaluating slurry productivity and filter-induced agglomeration, 0.8 L per minute (LPM) was identified as the optimal flow rate. Additionally, after filtration at 0.8 LPM, the maximum reduction in removal rates was relatively small at 272.54 Å/min due to decreased edge removal rates. However, by removing large particles to implement a monodisperse state, an improvement in uniformity of 17.11 % was achieved. Therefore, the CMP performance can be enhanced using surface filtration to control the particle size distribution (PSD). [ABSTRACT FROM AUTHOR]
Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 179502605
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Optimization of surface filtration to enhance wafer uniformity by removing large particle in ceria slurry.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Oh%2C+Seungjun%22">Oh, Seungjun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Back%2C+Geumji%22">Back, Geumji</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Park%2C+Sanghyeon%22">Park, Sanghyeon</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+HunWook%22">Lee, HunWook</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Seo%2C+Heedo%22">Seo, Heedo</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Yoonsub%22">Kim, Yoonsub</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Taesung%22">Kim, Taesung</searchLink><relatesTo>1,2,4</relatesTo> (AUTHOR)<i> tkim@skku.edu</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>. Nov2024, Vol. 183, pN.PAG-N.PAG. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Particle+size+distribution%22">Particle size distribution</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+industry%22">Semiconductor industry</searchLink><br /><searchLink fieldCode="DE" term="%22Cerium+oxides%22">Cerium oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Performance+management%22">Performance management</searchLink><br /><searchLink fieldCode="DE" term="%22Uniformity%22">Uniformity</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Owing to the limitations of scaling down, the development of complex structures for chip design is progressing in the semiconductor industry. As a result, the chemical mechanical polishing (CMP) process has become essential for the precise control of micro-level steps and for maintaining surface uniformity between layers during the stacking process. Structural management and improved performance of the consumables used in CMP processes are required. In particular, controlling the abrasive particles in the slurry that directly contact the wafer surface is crucial. Large particles within the slurry can occur scratches and cause non-uniformity in the polishing process, thus the particle size distribution of the slurry must be regulated. In this study, two types of filtration systems were constructed to determine the optimal conditions for CMP of ceria slurry. Depth filtration effectively removes particles through a cake layer formation mechanism but has limitations in achieving a consistent pore size within the fiber layer. Consequently, separation efficiency for particle sizes is relatively low. In contrast, surface filtration consisting of a single membrane demonstrates a consistent correlation between pore size and the size of the filtered particles, resulting in high particle removal efficiency. The pore size capable of removing large particles without active particle loss was 200 nm. After evaluating slurry productivity and filter-induced agglomeration, 0.8 L per minute (LPM) was identified as the optimal flow rate. Additionally, after filtration at 0.8 LPM, the maximum reduction in removal rates was relatively small at 272.54 Å/min due to decreased edge removal rates. However, by removing large particles to implement a monodisperse state, an improvement in uniformity of 17.11 % was achieved. Therefore, the CMP performance can be enhanced using surface filtration to control the particle size distribution (PSD). [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=179502605
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.mssp.2024.108740
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Particle size distribution
        Type: general
      – SubjectFull: Semiconductor industry
        Type: general
      – SubjectFull: Cerium oxides
        Type: general
      – SubjectFull: Performance management
        Type: general
      – SubjectFull: Uniformity
        Type: general
    Titles:
      – TitleFull: Optimization of surface filtration to enhance wafer uniformity by removing large particle in ceria slurry.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Oh, Seungjun
      – PersonEntity:
          Name:
            NameFull: Back, Geumji
      – PersonEntity:
          Name:
            NameFull: Park, Sanghyeon
      – PersonEntity:
          Name:
            NameFull: Lee, HunWook
      – PersonEntity:
          Name:
            NameFull: Seo, Heedo
      – PersonEntity:
          Name:
            NameFull: Kim, Yoonsub
      – PersonEntity:
          Name:
            NameFull: Kim, Taesung
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 11
              Text: Nov2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 13698001
          Numbering:
            – Type: volume
              Value: 183
          Titles:
            – TitleFull: Materials Science in Semiconductor Processing
              Type: main
ResultId 1