High-Rate Glass Etching Process for Transferring Polycrystalline Silicon Thin-Film Transistors to Flexible Substrates.
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| Title: | High-Rate Glass Etching Process for Transferring Polycrystalline Silicon Thin-Film Transistors to Flexible Substrates. |
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| Authors: | Takechi, K.1 k.takechi@tradim.or.jp, Eguchi, T.1, Kanoh, H.2, Ito, T.3, Otsuki, S.1 |
| Source: | IEEE Transactions on Semiconductor Manufacturing. Aug2005, Vol. 18 Issue 3, p384-389. 6p. |
| Subjects: | Glass etching, Thin films, Silicon, Thin film devices, Semiconductors, Etching |
| Abstract: | We report on a process technology that makes possible the transfer of polycrystalline silicon thin-film transistor (poly-Si TFT) arrays from an original rigid glass substrate to another flexible plastic substrate. The transfer technology is characterized by its high-rate glass etching process, using a newly developed apparatus. After a description of the transfer sequence free from adhesive contamination, we present experimental observations for high-rate glass etching in hydrofluoric (HF) and hydrochloric (HCI) acid solution mixtures. The etching apparatus provides jets of the solution mixtures to the glass surface in order to achieve good circulation of the solutions in the bath, as well as to remove etch products effectively from the surface. We successfully achieved etch rates as high as 6 μm/min with the etched surfaces almost as smooth as the original glass. In order to gain insight into the chemical mechanism of the etching, we developed a simplified kinetic etching model based on a Langmuir isotherm. The model and experimental etch-rate data are generally in good agreement, indicating that the basic modeling approach captures much of the essential chemistry for the high-rate glass etching. The transfer technology allows us to obtain TFT flexible substrates with good electrical characteristics and flexibility even after an annealing process at as high as 150°C. These results demonstrate that the transfer technology is a promising candidate for achieving entirely new lightweight electronic devices such as flexible displays and radio frequency identification tags based on TFT flexible substrates. [ABSTRACT FROM AUTHOR] |
| Copyright of IEEE Transactions on Semiconductor Manufacturing is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 17994693 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: High-Rate Glass Etching Process for Transferring Polycrystalline Silicon Thin-Film Transistors to Flexible Substrates. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Takechi%2C+K%2E%22">Takechi, K.</searchLink><relatesTo>1</relatesTo><i> k.takechi@tradim.or.jp</i><br /><searchLink fieldCode="AR" term="%22Eguchi%2C+T%2E%22">Eguchi, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kanoh%2C+H%2E%22">Kanoh, H.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Ito%2C+T%2E%22">Ito, T.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Otsuki%2C+S%2E%22">Otsuki, S.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Semiconductor+Manufacturing%22">IEEE Transactions on Semiconductor Manufacturing</searchLink>. Aug2005, Vol. 18 Issue 3, p384-389. 6p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Glass+etching%22">Glass etching</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+devices%22">Thin film devices</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Etching%22">Etching</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: We report on a process technology that makes possible the transfer of polycrystalline silicon thin-film transistor (poly-Si TFT) arrays from an original rigid glass substrate to another flexible plastic substrate. The transfer technology is characterized by its high-rate glass etching process, using a newly developed apparatus. After a description of the transfer sequence free from adhesive contamination, we present experimental observations for high-rate glass etching in hydrofluoric (HF) and hydrochloric (HCI) acid solution mixtures. The etching apparatus provides jets of the solution mixtures to the glass surface in order to achieve good circulation of the solutions in the bath, as well as to remove etch products effectively from the surface. We successfully achieved etch rates as high as 6 μm/min with the etched surfaces almost as smooth as the original glass. In order to gain insight into the chemical mechanism of the etching, we developed a simplified kinetic etching model based on a Langmuir isotherm. The model and experimental etch-rate data are generally in good agreement, indicating that the basic modeling approach captures much of the essential chemistry for the high-rate glass etching. The transfer technology allows us to obtain TFT flexible substrates with good electrical characteristics and flexibility even after an annealing process at as high as 150°C. These results demonstrate that the transfer technology is a promising candidate for achieving entirely new lightweight electronic devices such as flexible displays and radio frequency identification tags based on TFT flexible substrates. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Transactions on Semiconductor Manufacturing is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TSM.2005.852102 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 6 StartPage: 384 Subjects: – SubjectFull: Glass etching Type: general – SubjectFull: Thin films Type: general – SubjectFull: Silicon Type: general – SubjectFull: Thin film devices Type: general – SubjectFull: Semiconductors Type: general – SubjectFull: Etching Type: general Titles: – TitleFull: High-Rate Glass Etching Process for Transferring Polycrystalline Silicon Thin-Film Transistors to Flexible Substrates. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Takechi, K. – PersonEntity: Name: NameFull: Eguchi, T. – PersonEntity: Name: NameFull: Kanoh, H. – PersonEntity: Name: NameFull: Ito, T. – PersonEntity: Name: NameFull: Otsuki, S. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2005 Type: published Y: 2005 Identifiers: – Type: issn-print Value: 08946507 Numbering: – Type: volume Value: 18 – Type: issue Value: 3 Titles: – TitleFull: IEEE Transactions on Semiconductor Manufacturing Type: main |
| ResultId | 1 |
