Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance.
Saved in:
| Title: | Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance. |
|---|---|
| Authors: | Peverini, Francesca1,2 (AUTHOR) carlo.calcatelli@unipg.it, Aziz, Saba3 (AUTHOR) saba.aziz@unisalento.it, Bashiri, Aishah3,4 (AUTHOR) mjl970@uowmail.edu.au, Bizzarri, Marco1,2 (AUTHOR) mirco.caprai@pg.infn.it, Boscardin, Maurizio5,6 (AUTHOR) boscardi@fbk.eu, Calcagnile, Lucio7,8 (AUTHOR) lucio.calcagnile@unisalento.it, Calcatelli, Carlo2 (AUTHOR), Calvo, Daniela9 (AUTHOR) calvo@to.infn.it, Caponi, Silvia10 (AUTHOR) silvia.caponi@cnr.it, Caprai, Mirco1 (AUTHOR) tommaso.croci@pg.infn.it, Caputo, Domenico11,12 (AUTHOR) domenico.caputo@uniroma1.it, Caricato, Anna Paola7 (AUTHOR) annapaola.caricato@le.infn.it, Catalano, Roberto13 (AUTHOR) roberto.catalano@lns.infn.it, Cirro, Roberto9 (AUTHOR) cirio@to.infn.it, Cirrone, Giuseppe Antonio Pablo13 (AUTHOR) pablo.cirrone@infn.it, Crivellari, Michele6 (AUTHOR) ohammadali@fbk.eu, Croci, Tommaso1,14 (AUTHOR) giampiero.decesare@uniroma1.it, Cuttone, Giacomo13 (AUTHOR) giacomo.cuttone@lns.infn.it, de Cesare, Gianpiero1,11 (AUTHOR) livio.fano@pg.infn.it, De Remigis, Paolo9 (AUTHOR) deremigi@to.infn.it |
| Source: | Nanomaterials (2079-4991). Oct2024, Vol. 14 Issue 19, p1551. 14p. |
| Subjects: | Hydrogenated amorphous silicon, Energy levels (Quantum mechanics), Nuclear counters, Substrates (Materials science), Amorphous silicon |
| Abstract: | This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous silicon (a-Si) is inherently a highly defective material, hydrogenation significantly reduces defect density, enabling its use in radiation detector devices. Spectroscopic measurements provide insights into the intricate relationship between the structure and electronic properties of a-Si, enhancing our understanding of how specific configurations, such as the choice of substrate, can markedly influence detector performance. In this study, we compare the performance of a-Si detectors deposited on two different substrates: crystalline silicon (c-Si) and flexible Kapton. Our findings suggest that detectors deposited on Kapton exhibit reduced sensitivity, despite having comparable noise and leakage current levels to those on crystalline silicon. We hypothesize that this discrepancy may be attributed to the substrate material, differences in film morphology, and/or the alignment of energy levels. Further measurements are planned to substantiate these hypotheses. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
Be the first to leave a comment!
