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Bipolar-resistive switching characteristics in lead-free inorganic double-halide perovskite-based memory devices.

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Title: Bipolar-resistive switching characteristics in lead-free inorganic double-halide perovskite-based memory devices.
Authors: Das, Susmita1 (AUTHOR), Haldar, Prabir Kumar1 (AUTHOR), Sarkar, Pranab Kumar2 (AUTHOR) Pranab.sarkar83@gmail.com
Source: Bulletin of Materials Science. Dec2024, Vol. 47 Issue 4, p1-5. 5p.
Subjects: Nonvolatile random-access memory, Data warehousing, Band gaps, Absorption spectra, Optoelectronic devices
Abstract: Owing to the increasing demands of high-density data storage double-halide perovskite-based resistive random access memory (RRAM) have recently emerged as a promising candidate in the forefront of next-generation optoelectronic memory applications. The ionic motion-based quick switching is the key feature of this kind of material, which plays a significant role in resistive switching (RS) applications. Recently, lead-free tin-based double-halide perovskites have been considered as favourable material due to their superior stability, functionality and eco-friendly nature. Here, we report the synthesis of cesium tin (IV) iodide (Cs2SnI6) perovskites. X-ray diffraction (XRD) pattern of the as-synthesized perovskite confirms the formation of Cs2SnI6 material. The crystallographic data corroborate the formation of a pure cubic phase, free of any other phase at room temperature. We also studied optical properties of the sample by using the ultraviolet–visible (UV) spectra and photoluminescence (PL) spectra. A broadband at around 580 nm is observed in the UV−Vis absorption spectra. The optical band gap of the sample is found to be 1.68 eV. Cs2SnI6 perovskite exhibited intense PL emission at ~540 nm. In this work, to fabricate a flexible Al/Cs2SnI6/ITO-PET memory device, we used Cs2SnI6 film as a switching layer and the device exhibits bipolar RS characteristics. [ABSTRACT FROM AUTHOR]
Copyright of Bulletin of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Bipolar-resistive switching characteristics in lead-free inorganic double-halide perovskite-based memory devices.
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  Data: <searchLink fieldCode="AR" term="%22Das%2C+Susmita%22">Das, Susmita</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Haldar%2C+Prabir+Kumar%22">Haldar, Prabir Kumar</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sarkar%2C+Pranab+Kumar%22">Sarkar, Pranab Kumar</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> Pranab.sarkar83@gmail.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Bulletin+of+Materials+Science%22">Bulletin of Materials Science</searchLink>. Dec2024, Vol. 47 Issue 4, p1-5. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Nonvolatile+random-access+memory%22">Nonvolatile random-access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Data+warehousing%22">Data warehousing</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Absorption+spectra%22">Absorption spectra</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronic+devices%22">Optoelectronic devices</searchLink>
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  Data: Owing to the increasing demands of high-density data storage double-halide perovskite-based resistive random access memory (RRAM) have recently emerged as a promising candidate in the forefront of next-generation optoelectronic memory applications. The ionic motion-based quick switching is the key feature of this kind of material, which plays a significant role in resistive switching (RS) applications. Recently, lead-free tin-based double-halide perovskites have been considered as favourable material due to their superior stability, functionality and eco-friendly nature. Here, we report the synthesis of cesium tin (IV) iodide (Cs2SnI6) perovskites. X-ray diffraction (XRD) pattern of the as-synthesized perovskite confirms the formation of Cs2SnI6 material. The crystallographic data corroborate the formation of a pure cubic phase, free of any other phase at room temperature. We also studied optical properties of the sample by using the ultraviolet–visible (UV) spectra and photoluminescence (PL) spectra. A broadband at around 580 nm is observed in the UV−Vis absorption spectra. The optical band gap of the sample is found to be 1.68 eV. Cs2SnI6 perovskite exhibited intense PL emission at ~540 nm. In this work, to fabricate a flexible Al/Cs2SnI6/ITO-PET memory device, we used Cs2SnI6 film as a switching layer and the device exhibits bipolar RS characteristics. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Bulletin of Materials Science is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s12034-024-03286-1
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        Text: English
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      – SubjectFull: Data warehousing
        Type: general
      – SubjectFull: Band gaps
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      – SubjectFull: Absorption spectra
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      – TitleFull: Bipolar-resistive switching characteristics in lead-free inorganic double-halide perovskite-based memory devices.
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            NameFull: Das, Susmita
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            NameFull: Haldar, Prabir Kumar
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            – D: 01
              M: 12
              Text: Dec2024
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              Y: 2024
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