Microstructure Evolution of the Interface in SiC f /TiC-Ti 3 SiC 2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process.
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| Title: | Microstructure Evolution of the Interface in SiC f /TiC-Ti 3 SiC 2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process. |
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| Authors: | Lei, Penghui1 (AUTHOR) penghuilei@xjtu.edu.cn, Chang, Qing2,3 (AUTHOR) changqing@mail.nwpu.edu.cn, Xiao, Mingkun2,3 (AUTHOR) xiaomingkun@mail.nwpu.edu.cn, Ye, Chao2,3 (AUTHOR) yechao@nwpu.edu.cn, Qi, Pan4 (AUTHOR) qipan@cnnp.com.cn, Shi, Fangjie5 (AUTHOR) fangjie158@163.com, Hang, Yuhua5 (AUTHOR) hangyuhua@163.com, Li, Qianwu5 (AUTHOR) l1192177798@163.com, Peng, Qing6,7,8 (AUTHOR) yechao@nwpu.edu.cn |
| Source: | Nanomaterials (2079-4991). Oct2024, Vol. 14 Issue 20, p1629. 11p. |
| Subjects: | Discontinuous precipitation, Transmission electron microscopy, Free surfaces, Amorphization, Ions |
| Abstract: | A new type of SiCf/TiC-Ti3SiC2 composite was prepared by the Spark Plasma Sintering (SPS) method in this work. The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions. Xe ion irradiation resulted in the formation of high-density stacking faults in the TiC coatings and the complete amorphization of SiC fibers. The implanted H ions exacerbated interface coarsening. After annealing at 900 °C for 2 h, the interface in the Xe + He + H ion-irradiated samples was seriously damaged, resulting in the formation of large bubbles and cracks. This damage occurred because the H atoms reduced the surface free energy, thereby promoting the nucleation and growth of bubbles. Due to the absorption effect of the SiCf/TiC interface on defects, the SiC fiber areas near the interface recovered back to the initial nano-polycrystalline structure after annealing. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | A new type of SiCf/TiC-Ti3SiC2 composite was prepared by the Spark Plasma Sintering (SPS) method in this work. The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions. Xe ion irradiation resulted in the formation of high-density stacking faults in the TiC coatings and the complete amorphization of SiC fibers. The implanted H ions exacerbated interface coarsening. After annealing at 900 °C for 2 h, the interface in the Xe + He + H ion-irradiated samples was seriously damaged, resulting in the formation of large bubbles and cracks. This damage occurred because the H atoms reduced the surface free energy, thereby promoting the nucleation and growth of bubbles. Due to the absorption effect of the SiCf/TiC interface on defects, the SiC fiber areas near the interface recovered back to the initial nano-polycrystalline structure after annealing. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano14201629 |
