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Microstructure Evolution of the Interface in SiC f /TiC-Ti 3 SiC 2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process.

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Title: Microstructure Evolution of the Interface in SiC f /TiC-Ti 3 SiC 2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process.
Authors: Lei, Penghui1 (AUTHOR) penghuilei@xjtu.edu.cn, Chang, Qing2,3 (AUTHOR) changqing@mail.nwpu.edu.cn, Xiao, Mingkun2,3 (AUTHOR) xiaomingkun@mail.nwpu.edu.cn, Ye, Chao2,3 (AUTHOR) yechao@nwpu.edu.cn, Qi, Pan4 (AUTHOR) qipan@cnnp.com.cn, Shi, Fangjie5 (AUTHOR) fangjie158@163.com, Hang, Yuhua5 (AUTHOR) hangyuhua@163.com, Li, Qianwu5 (AUTHOR) l1192177798@163.com, Peng, Qing6,7,8 (AUTHOR) yechao@nwpu.edu.cn
Source: Nanomaterials (2079-4991). Oct2024, Vol. 14 Issue 20, p1629. 11p.
Subjects: Discontinuous precipitation, Transmission electron microscopy, Free surfaces, Amorphization, Ions
Abstract: A new type of SiCf/TiC-Ti3SiC2 composite was prepared by the Spark Plasma Sintering (SPS) method in this work. The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions. Xe ion irradiation resulted in the formation of high-density stacking faults in the TiC coatings and the complete amorphization of SiC fibers. The implanted H ions exacerbated interface coarsening. After annealing at 900 °C for 2 h, the interface in the Xe + He + H ion-irradiated samples was seriously damaged, resulting in the formation of large bubbles and cracks. This damage occurred because the H atoms reduced the surface free energy, thereby promoting the nucleation and growth of bubbles. Due to the absorption effect of the SiCf/TiC interface on defects, the SiC fiber areas near the interface recovered back to the initial nano-polycrystalline structure after annealing. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Microstructure Evolution of the Interface in SiC f /TiC-Ti 3 SiC 2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process.
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  Data: A new type of SiCf/TiC-Ti3SiC2 composite was prepared by the Spark Plasma Sintering (SPS) method in this work. The phase transformation and interface cracking of this composite under ion irradiation (single Xe, Xe + He, and Xe + He + H ions) and subsequent annealing were analyzed using transmission electron microscopy (TEM), mainly focusing on the interface regions. Xe ion irradiation resulted in the formation of high-density stacking faults in the TiC coatings and the complete amorphization of SiC fibers. The implanted H ions exacerbated interface coarsening. After annealing at 900 °C for 2 h, the interface in the Xe + He + H ion-irradiated samples was seriously damaged, resulting in the formation of large bubbles and cracks. This damage occurred because the H atoms reduced the surface free energy, thereby promoting the nucleation and growth of bubbles. Due to the absorption effect of the SiCf/TiC interface on defects, the SiC fiber areas near the interface recovered back to the initial nano-polycrystalline structure after annealing. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano14201629
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        Text: English
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        PageCount: 11
        StartPage: 1629
    Subjects:
      – SubjectFull: Discontinuous precipitation
        Type: general
      – SubjectFull: Transmission electron microscopy
        Type: general
      – SubjectFull: Free surfaces
        Type: general
      – SubjectFull: Amorphization
        Type: general
      – SubjectFull: Ions
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      – TitleFull: Microstructure Evolution of the Interface in SiC f /TiC-Ti 3 SiC 2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process.
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              Text: Oct2024
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