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Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing.

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Title: Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing.
Authors: Fan, Ching-Lin1,2 (AUTHOR) clfan@mail.ntust.edu.tw, Chen, Yan-Quan1 (AUTHOR), Yu, Xiang-Wei1 (AUTHOR), Tsai, Yung-Sheng1 (AUTHOR)
Source: Materials Science in Semiconductor Processing. Jan2025, Vol. 185, pN.PAG-N.PAG. 1p.
Subjects: Thin film transistors, Threshold voltage, Annealing of semiconductors, Charge carrier mobility, Xenon
Abstract: The electrical characteristics and stability of amorphous indium-zinc-tin oxide (IZTO) thin-film transistors (TFTs) were significantly improved in this study using low-energy Xenon pulsed-light annealing (PLA). In comparison to conventional furnace annealing (FA), PLA treatment significantly reduced the processing temperature and annealing time. Besides, the defect states are obviously reduced from 1.73×1012 cm-2 to 6.53×1011 cm-2 by PLA treatment, resulting in improved device electrical characteristics and enhanced reliability, including improved carrier mobility from 20.08 to 39.61 cm2/V∙s, threshold voltage from 0.82 to 0.24 V, subthreshold swing (S.S.) from 0.54 to 0.24 V/decade, and the ON/OFF current ratio from 2.32×107 to 7.31×108. In addition, the enhanced stability is observed under both positive gate-bias stress (PGBS) of V GS = 30 V and negative gate-bias stress (NGBS) of V GS = –30 V for a stress duration of 3000 s. The threshold voltage shift (ΔV TH) is reduced from 8.31 V to 1.65 V and from –3.93 V to –1.51 V, respectively. This is the first time low-energy PLA was conducted for IZTO TFT performance improvement. [ABSTRACT FROM AUTHOR]
Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 180768990
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Fan%2C+Ching-Lin%22">Fan, Ching-Lin</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> clfan@mail.ntust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Chen%2C+Yan-Quan%22">Chen, Yan-Quan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yu%2C+Xiang-Wei%22">Yu, Xiang-Wei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tsai%2C+Yung-Sheng%22">Tsai, Yung-Sheng</searchLink><relatesTo>1</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>. Jan2025, Vol. 185, pN.PAG-N.PAG. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Annealing+of+semiconductors%22">Annealing of semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carrier+mobility%22">Charge carrier mobility</searchLink><br /><searchLink fieldCode="DE" term="%22Xenon%22">Xenon</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The electrical characteristics and stability of amorphous indium-zinc-tin oxide (IZTO) thin-film transistors (TFTs) were significantly improved in this study using low-energy Xenon pulsed-light annealing (PLA). In comparison to conventional furnace annealing (FA), PLA treatment significantly reduced the processing temperature and annealing time. Besides, the defect states are obviously reduced from 1.73×1012 cm-2 to 6.53×1011 cm-2 by PLA treatment, resulting in improved device electrical characteristics and enhanced reliability, including improved carrier mobility from 20.08 to 39.61 cm2/V∙s, threshold voltage from 0.82 to 0.24 V, subthreshold swing (S.S.) from 0.54 to 0.24 V/decade, and the ON/OFF current ratio from 2.32×107 to 7.31×108. In addition, the enhanced stability is observed under both positive gate-bias stress (PGBS) of V GS = 30 V and negative gate-bias stress (NGBS) of V GS = –30 V for a stress duration of 3000 s. The threshold voltage shift (ΔV TH) is reduced from 8.31 V to 1.65 V and from –3.93 V to –1.51 V, respectively. This is the first time low-energy PLA was conducted for IZTO TFT performance improvement. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.mssp.2024.108954
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Thin film transistors
        Type: general
      – SubjectFull: Threshold voltage
        Type: general
      – SubjectFull: Annealing of semiconductors
        Type: general
      – SubjectFull: Charge carrier mobility
        Type: general
      – SubjectFull: Xenon
        Type: general
    Titles:
      – TitleFull: Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Fan, Ching-Lin
      – PersonEntity:
          Name:
            NameFull: Chen, Yan-Quan
      – PersonEntity:
          Name:
            NameFull: Yu, Xiang-Wei
      – PersonEntity:
          Name:
            NameFull: Tsai, Yung-Sheng
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: Jan2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 13698001
          Numbering:
            – Type: volume
              Value: 185
          Titles:
            – TitleFull: Materials Science in Semiconductor Processing
              Type: main
ResultId 1