Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing.
Saved in:
| Title: | Amorphous InZnSnO thin-film-transistors performance enhancement with low-energy Xenon Pulsed-light annealing. |
|---|---|
| Authors: | Fan, Ching-Lin1,2 (AUTHOR) clfan@mail.ntust.edu.tw, Chen, Yan-Quan1 (AUTHOR), Yu, Xiang-Wei1 (AUTHOR), Tsai, Yung-Sheng1 (AUTHOR) |
| Source: | Materials Science in Semiconductor Processing. Jan2025, Vol. 185, pN.PAG-N.PAG. 1p. |
| Subjects: | Thin film transistors, Threshold voltage, Annealing of semiconductors, Charge carrier mobility, Xenon |
| Abstract: | The electrical characteristics and stability of amorphous indium-zinc-tin oxide (IZTO) thin-film transistors (TFTs) were significantly improved in this study using low-energy Xenon pulsed-light annealing (PLA). In comparison to conventional furnace annealing (FA), PLA treatment significantly reduced the processing temperature and annealing time. Besides, the defect states are obviously reduced from 1.73×1012 cm-2 to 6.53×1011 cm-2 by PLA treatment, resulting in improved device electrical characteristics and enhanced reliability, including improved carrier mobility from 20.08 to 39.61 cm2/V∙s, threshold voltage from 0.82 to 0.24 V, subthreshold swing (S.S.) from 0.54 to 0.24 V/decade, and the ON/OFF current ratio from 2.32×107 to 7.31×108. In addition, the enhanced stability is observed under both positive gate-bias stress (PGBS) of V GS = 30 V and negative gate-bias stress (NGBS) of V GS = –30 V for a stress duration of 3000 s. The threshold voltage shift (ΔV TH) is reduced from 8.31 V to 1.65 V and from –3.93 V to –1.51 V, respectively. This is the first time low-energy PLA was conducted for IZTO TFT performance improvement. [ABSTRACT FROM AUTHOR] |
| Copyright of Materials Science in Semiconductor Processing is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
Be the first to leave a comment!
