View in EDS HTML Full Text PDF Full Text

Characterization of Ohmic Metal/Hg1−xCdxTe Contacts for Infrared Detection.

Saved in:
Bibliographic Details
Title: Characterization of Ohmic Metal/Hg1−xCdxTe Contacts for Infrared Detection.
Authors: Frau, Elise1,2 (AUTHOR) elise.frau@lynred.com, Sam-Giao, Diane1 (AUTHOR), Kerlain, Alexandre1 (AUTHOR), Brylinski, Christian2 (AUTHOR)
Source: Journal of Electronic Materials. Dec2024, Vol. 53 Issue 12, p8098-8107. 10p.
Subjects: Focal plane arrays sensors, Schottky barrier, P-type semiconductors, Activation energy, Values (Ethics), Ohmic contacts, Mercury (Element)
Abstract: In this work, metal contacts are fabricated on a p-type Hg1−xCdxTe semiconductor, with composition x = 0.30 and acceptor mercury vacancy concentration in the range of 1016 cm−3, by two different technological processes. Depending on the fabrication process, either non-ohmic contacts, with highly nonlinear current–voltage I(V) characteristics, or ohmic contacts are obtained. Different test patterns are measured at variable temperatures down to 77 K. Isolated small-area contacts, comparable to those in focal plane arrays (FPAs), are used to characterize the metal/semiconductor Schottky barrier energy, while transfer length method (TLM) structures are used to estimate the contact specific resistivity of the ohmic contacts. Classical circular TLM (CTLM) patterns are studied and, in addition, new patterns, referred to as variable-width closed TLM (VW-CTLM), are proposed. The linear I(V) characteristics, measured at variable temperatures down to 77 K, demonstrate that high-performance true ohmic contacts on p-type Hg1−xCdxTe can be obtained. To our knowledge, the contact specific resistivity values for these contacts, in the range 0.7–1.8 × 10−4 ohms cm2 at 77 K, are lower than the published state-of-the-art values. The very stable values of contact resistance over the whole temperature range is coherent with a dominant pure tunnel conduction mechanism through the metal/Hg1−xCdxTe barrier. TLM is used to analyze the ohmic contacts, and in some cases is used to obtain useful information even on some of the non-ohmic contacts, which is somewhat unusual and possibly innovative. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 180990503
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Characterization of Ohmic Metal/Hg<subscript>1−x</subscript>Cd<subscript>x</subscript>Te Contacts for Infrared Detection.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Frau%2C+Elise%22">Frau, Elise</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> elise.frau@lynred.com</i><br /><searchLink fieldCode="AR" term="%22Sam-Giao%2C+Diane%22">Sam-Giao, Diane</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kerlain%2C+Alexandre%22">Kerlain, Alexandre</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Brylinski%2C+Christian%22">Brylinski, Christian</searchLink><relatesTo>2</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Dec2024, Vol. 53 Issue 12, p8098-8107. 10p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Focal+plane+arrays+sensors%22">Focal plane arrays sensors</searchLink><br /><searchLink fieldCode="DE" term="%22Schottky+barrier%22">Schottky barrier</searchLink><br /><searchLink fieldCode="DE" term="%22P-type+semiconductors%22">P-type semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Activation+energy%22">Activation energy</searchLink><br /><searchLink fieldCode="DE" term="%22Values+%28Ethics%29%22">Values (Ethics)</searchLink><br /><searchLink fieldCode="DE" term="%22Ohmic+contacts%22">Ohmic contacts</searchLink><br /><searchLink fieldCode="DE" term="%22Mercury+%28Element%29%22">Mercury (Element)</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this work, metal contacts are fabricated on a p-type Hg1−xCdxTe semiconductor, with composition x = 0.30 and acceptor mercury vacancy concentration in the range of 1016 cm−3, by two different technological processes. Depending on the fabrication process, either non-ohmic contacts, with highly nonlinear current–voltage I(V) characteristics, or ohmic contacts are obtained. Different test patterns are measured at variable temperatures down to 77 K. Isolated small-area contacts, comparable to those in focal plane arrays (FPAs), are used to characterize the metal/semiconductor Schottky barrier energy, while transfer length method (TLM) structures are used to estimate the contact specific resistivity of the ohmic contacts. Classical circular TLM (CTLM) patterns are studied and, in addition, new patterns, referred to as variable-width closed TLM (VW-CTLM), are proposed. The linear I(V) characteristics, measured at variable temperatures down to 77 K, demonstrate that high-performance true ohmic contacts on p-type Hg1−xCdxTe can be obtained. To our knowledge, the contact specific resistivity values for these contacts, in the range 0.7–1.8 × 10−4 ohms cm2 at 77 K, are lower than the published state-of-the-art values. The very stable values of contact resistance over the whole temperature range is coherent with a dominant pure tunnel conduction mechanism through the metal/Hg1−xCdxTe barrier. TLM is used to analyze the ohmic contacts, and in some cases is used to obtain useful information even on some of the non-ohmic contacts, which is somewhat unusual and possibly innovative. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=180990503
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-024-11295-3
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 8098
    Subjects:
      – SubjectFull: Focal plane arrays sensors
        Type: general
      – SubjectFull: Schottky barrier
        Type: general
      – SubjectFull: P-type semiconductors
        Type: general
      – SubjectFull: Activation energy
        Type: general
      – SubjectFull: Values (Ethics)
        Type: general
      – SubjectFull: Ohmic contacts
        Type: general
      – SubjectFull: Mercury (Element)
        Type: general
    Titles:
      – TitleFull: Characterization of Ohmic Metal/Hg1−xCdxTe Contacts for Infrared Detection.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Frau, Elise
      – PersonEntity:
          Name:
            NameFull: Sam-Giao, Diane
      – PersonEntity:
          Name:
            NameFull: Kerlain, Alexandre
      – PersonEntity:
          Name:
            NameFull: Brylinski, Christian
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 12
              Text: Dec2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 03615235
          Numbering:
            – Type: volume
              Value: 53
            – Type: issue
              Value: 12
          Titles:
            – TitleFull: Journal of Electronic Materials
              Type: main
ResultId 1